机构

• 半导体研究所 [11]
• 上海微系统与信息技术... [9]
• 金属研究所 [1]
• 新疆天文台 [1]

采集方式

• OAI收割 [22]

内容类型

• 期刊论文 [20]
• 会议论文 [2]

发表日期

• 2025 [1]
• 2010 [1]
• 2009 [1]
• 2006 [2]
• 2001 [3]
• 2000 [4]
• 更多

学科主题

• Chemistry,... [9]
• 半导体材料 [8]
• 半导体物理 [2]
• 光电子学 [1]

筛选

浏览/检索结果: 共22条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Cryogenic MMIC Low-Noise Amplifiers for Radio Telescope Applications 期刊论文  OAI收割 ELECTRONICS, 2025, 卷号: 14, 期号: 8, 页码: 1572 作者:  Wang, Haohui;  Chen, Maozheng   |  收藏  |  浏览/下载：2/0  |  提交时间：2025/07/07 cryogenic low-noise amplifiers (LNAs)  gallium arsenide (GaAs)  monolithic microwave integrated circuits (MMICs)  radio astronomical receiver   Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文  OAI收割 thin solid films, THIN SOLID FILMS, 2010, 2010, 卷号: 519, 519, 期号: 1, 页码: 228-230, 228-230 作者:  Hao RT (Hao Ruiting);  Deng SK (Deng Shukang);  Shen LX (Shen Lanxian);  Yang PZ (Yang Peizhi);  Tu JL (Tu Jielei)   |  收藏  |  浏览/下载：51/0  |  提交时间：2010/12/28 Gallium Arsenide  Gallium Arsenide  Gallium Antimonide  Gallium Antimonide/aluminum Antimonide  Superlattices  Molecular Beam Epitaxy  Vapor-phase Epitaxy  Surface-morphology  Growth  Superlattices  Temperature  Relaxation  Detectors  Gaas(001)  Mocvd  Films  Gallium antimonide  Gallium antimonide/Aluminum antimonide  Superlattices  Molecular Beam Epitaxy  VAPOR-PHASE EPITAXY  SURFACE-MORPHOLOGY  GROWTH  SUPERLATTICES  TEMPERATURE  RELAXATION  DETECTORS  GAAS(001)  MOCVD  FILMS   Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文  OAI收割 applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720 Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP 收藏  |  浏览/下载：94/25  |  提交时间：2010/03/08 GAAS PHOTOCATHODES  GALLIUM-ARSENIDE  ALXGA1-XAS  DIFFUSION  SURFACE  ENERGY   First-principles calculations for transition phase and thermodynamic properties of GaAs 期刊论文  OAI收割 Chinese Physics, 2006, 卷号: 15, 期号: 4, 页码: 802-806 L. Y. Lu; X. R. Chen; B. R. Yu; Q. Q. Gou 收藏  |  浏览/下载：25/0  |  提交时间：2012/04/13 transition phase  thermodynamic properties  GaAs  high-pressure  iii-v  structural-properties  electronic-structure  molecular-dynamics  gallium-arsenide  semiconductors  simulation  stability  alas   Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1-xNx alloys: A microphotoluminescence study 期刊论文  OAI收割 physical review b, 2006, 卷号: 73, 期号: 20, 页码: art.no.205205 Tan PH (Tan P. H.); Luo XD (Luo X. D.); Xu ZY (Xu Z. Y.); Zhang Y (Zhang Y.); Mascarenhas A (Mascarenhas A.); Xin HP (Xin H. P.); Tu CW (Tu C. W.); Ge WK (Ge W. K.) 收藏  |  浏览/下载：71/0  |  提交时间：2010/04/11 HOT PHOTOLUMINESCENCE  GALLIUM-ARSENIDE  GAAS  SEMICONDUCTORS  LUMINESCENCE  SCATTERING   Electronic states of Al3P2, Al2P3, and their ions 期刊论文  OAI收割 JOURNAL OF PHYSICAL CHEMISTRY A, 2001, 卷号: 105, 期号: 50, 页码: 11295-11303 Balasubramanian, K; Feng, PY 收藏  |  浏览/下载：28/0  |  提交时间：2012/03/24 ANION PHOTOELECTRON-SPECTROSCOPY  KINETIC-ENERGY SPECTROSCOPY  GALLIUM-ARSENIDE CLUSTERS  INDIUM-PHOSPHIDE CLUSTERS  SMALL GAAS CLUSTERS  RARE-GAS MATRICES  CONFIGURATION-INTERACTION  SEMICONDUCTOR CLUSTERS  ALUMINUM PHOSPHIDE  INFRARED SPECTRA   Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：26/0  |  提交时间：2010/11/15 crystal morphology  quantum dots  molecular beam epitaxy  semiconducting gallium arsenide  semiconducting indium gallium arsenide  1.35 MU-M  GAAS-SURFACES  PHOTOLUMINESCENCE  ISLANDS   Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 1062-1068 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：84/6  |  提交时间：2010/08/12 crystal morphology  quantum dots  molecular beam epitaxy  semiconducting gallium arsenide  semiconducting indium gallium arsenide  1.35 MU-M  GAAS-SURFACES  PHOTOLUMINESCENCE  ISLANDS   Electronic states of Al3As2, Al3As2-, Al3As2+, Al2As3, Al2As3-, and Al2As3+ 期刊论文  OAI收割 JOURNAL OF PHYSICAL CHEMISTRY A, 2000, 卷号: 104, 期号: 2, 页码: 422-432 Feng, PY; Dai, DG; Balasubramanian, K 收藏  |  浏览/下载：27/0  |  提交时间：2012/03/24 KINETIC-ENERGY SPECTROSCOPY  GALLIUM-ARSENIDE CLUSTERS  INDIUM-PHOSPHIDE CLUSTERS  SMALL GAAS CLUSTERS  RARE-GAS MATRICES  PHOTOELECTRON-SPECTROSCOPY  SEMICONDUCTOR CLUSTERS  INFRARED SPECTRA  GROWTH-PATTERNS  MOLECULES   Semi-insulating GaAs grown in outer space 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 134-138 Chen NF; Zhong XR; Lin LY; Xie X; Zhang M 收藏  |  浏览/下载：71/0  |  提交时间：2010/08/12 GaAs  outer space  microgravity  integrated circuit  SEMIINSULATING GALLIUM-ARSENIDE  LEC-GAAS  DEFECTS  STOICHIOMETRY  SEGREGATION  CARBON  BORON