中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共6条,第1-6条 帮助

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Improvement of GaN plasma etching uniformity by optimizing the coil electrode with plasma simulation and experimental validation 期刊论文  OAI收割
SURFACE & COATINGS TECHNOLOGY, 2020, 卷号: 400
作者:  
Xiao, Dezhi;  Ruan, Qingdong;  Liu, Liangliang;  Shen, Jie;  Cheng, Cheng
  |  收藏  |  浏览/下载:29/0  |  提交时间:2020/11/26
Investigations on a Multiple Mask Technique to Depress Processing-Induced Damage of ICP-Etched HgCdTe Trenches 期刊论文  OAI收割
J. Electron. Mater, 2013, 卷号: 42, 期号: 11
Z.H. YE; W.D. HU; W. LEI; W. LU; L. HE; L. YANG; P. ZHANG; Y. HUANG; C. LIN; C.H. SUN; X.N. HU; R.J. DING; X.S. CHEN
收藏  |  浏览/下载:23/0  |  提交时间:2014/11/11
Loss-Reduction in Flexibly Vertical Coupled Ring Lasers Through Asymmetric Double Shallow Ridge and ICP/ICP Cascade Etching 期刊论文  OAI收割
IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 卷号: 20, 期号: 21-24, 页码: 1821-1823
作者:  
Zhang R(张瑞英)
收藏  |  浏览/下载:13/0  |  提交时间:2010/01/15
Improvement of the performance of gan-based leds grown on sapphire substrates patterned by wet and icp etching 期刊论文  iSwitch采集
Solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 962-967
作者:  
Gao, Haiyong;  Yan, Fawang;  Zhang, Yang;  Li, Jinmin;  Zeng, Yiping
收藏  |  浏览/下载:27/0  |  提交时间:2019/05/12
Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching 期刊论文  OAI收割
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 962-967
Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH
收藏  |  浏览/下载:69/4  |  提交时间:2010/03/08
Inductively coupled plasma etching of two-dimensional inp/ingaasp-based photonic crystal 期刊论文  iSwitch采集
Acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 977-981
作者:  
Ma Xiao-Tao;  Zheng Wan-Hua;  Ren Gang;  Fan Zhong-Chao;  Chen Chang-Hui
收藏  |  浏览/下载:32/0  |  提交时间:2019/05/12