机构

• 半导体研究所 [8]
• 长春光学精密机械与物... [3]
• 金属研究所 [1]
• 苏州纳米技术与纳米仿... [1]
• 中国科学院大学 [1]

采集方式

• OAI收割 [10]
• iSwitch采集 [4]

内容类型

• 期刊论文 [10]
• 会议论文 [4]

发表日期

• 2015 [1]
• 2013 [1]
• 2007 [2]
• 2006 [3]
• 2005 [1]
• 2004 [1]
• 更多

学科主题

• 半导体材料 [5]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs 期刊论文  OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 卷号: 62, 期号: 10, 页码: 8 作者:  Hua, MY;  Liu, C;  Yang, S;  Liu, SH;  Fu, K 收藏  |  浏览/下载：38/0  |  提交时间：2015/12/31 Gallium nitride  gate dielectric  low-pressure chemical vapor deposition (LPCVD)  silicon nitride   Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者:  Zhang T. 收藏  |  浏览/下载：33/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.   Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd 期刊论文  iSwitch采集 Modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445 作者:  Zhao, Yongmei;  Sun, Guosheng;  Liu, Xingfang;  Li, Jiaye;  Zhao, Wanshun 收藏  |  浏览/下载：34/0  |  提交时间：2019/05/12 Aluminum nitride  Low pressure metalorganic chemical vapor deposition (lp-mocvd)  V/iii ratio  Preferential orientation growth mechanism   Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD 期刊论文  OAI收割 modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445 Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Luo, MC; Li, JM 收藏  |  浏览/下载：51/0  |  提交时间：2010/03/08 aluminum nitride  low pressure metalorganic chemical vapor deposition (LP-MOCVD)  V/III ratio  preferential orientation growth mechanism   High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure mocvd 期刊论文  iSwitch采集 Optical materials, 2006, 卷号: 28, 期号: 8-9, 页码: 1037-1040 作者:  Zhao, Q;  Pan, JQ;  Zhang, J;  Wang, W 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 Selective-area growth  Ultra-low-pressure  Metal-organic chemical vapor deposition  Tapered mask  Photoluminescence   Low threshold field electron emission of diamond films (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Liu L.;  Wang W.;  Wang W.;  Li M.;  Liu L. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 Since CVD diamond film possesses desirable properties  it has been widely investigated  and much research has been made in this field. In this experiment  we mainly studied the characteristics of field emission from the CVD diamond films. The motivation for the experiment is to gain some insight into a possible emission mechanism. The diamond films are grown using a hot filament chemical vapor deposition  basing on the diamond micro-grits on silicon substrates. And the diamond micro-grits are deposited on silicon substrates using electrophoresis coat method  through a solution of diamond micro-grits in ethyl alcohol. This study has revealed that emission can be obtained at fields as low as 1.8V/m. And the field emission measurements were carried out at a pressure of 10-4Pa.   High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD 期刊论文  OAI收割 optical materials, 2006, 卷号: 28, 期号: 8-9, 页码: 1037-1040 作者:  Pan JQ 收藏  |  浏览/下载：71/0  |  提交时间：2010/04/11 selective-area growth  ultra-low-pressure  metal-organic chemical vapor deposition  tapered mask  photoluminescence  BANDGAP ENERGY CONTROL  INTEGRATED DFB LASER  EPITAXY   Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE) 会议论文  OAI收割 Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China Fan X. W.; Shan C. X.; Yang Y.; Zhang J. Y.; Liu Y. C.; Lu Y. M.; Shen D. Z. 收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25 CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time  the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration  the size of dots becomes larger and the density decreases  which is explained by virtue of the surface free energy.   Study of photoluminescence spectra of si-rich sinx films 期刊论文  iSwitch采集 Materials letters, 2004, 卷号: 58, 期号: 19, 页码: 2397-2400 作者:  Liu, YZ;  Zhou, YQ;  Shi, WQ;  Zhao, LL;  Sun, BY 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/10 Photolumineseence  Rapid thermal annealing (rta)  Low pressure chemical vapor deposition (lpcvd)  Silicon nitride  Thin films  Optical materials and properties   Strain accommodation of 3c-sic grown on hydrogen-implanted si (001) substrate 期刊论文  iSwitch采集 Journal of crystal growth, 2003, 卷号: 257, 期号: 3-4, 页码: 321-325 作者:  Zhang, ZC;  Chen, YH;  Li, DB;  Zhang, FQ;  Yang, SY 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 Substrate  Heteroepitaxy  Low pressure chemical vapor deposition  Semiconducting silicon carbide