中国科学院机构知识库网格系统: 检索

The Resonance Suppression for Parallel Photovoltaic Grid-connected Inverters in Weak Grid 期刊论文 OAI收割
International Journal of Automation and Computing, 2018, 卷号: 15, 期号: 6, 页码: 716-727
作者: Qiu-Xia Yang; Kun Li; Cui-Mei Zhao; Hu Wang

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收藏 | 浏览/下载：16/0 | 提交时间：2021/02/23

Parallel photovoltaic grid-connected inverters weak grid, grid impedance resonance peak branch voltage and current double feedback.

Influence of Driving Frequency on the Argon Dielectric Barrier Discharge Excited by Gaussian Voltage at Atmospheric Pressure 期刊论文 OAI收割
ieee transactions on plasma science, 2016, 卷号: 44, 期号: 11, 页码: 2553-2563
作者: Xu, Yonggang; Jiang, Weiman; Tang, Jie; Zhu, Sha; Wang, Yishan

收藏 | 浏览/下载：46/0 | 提交时间：2016/12/23

Argon dielectric barrier discharge (DBD) driving frequency Gaussian voltage mode transition residual current peak

Novel Design for Centrifugal Counter-Current Chromatography: VI. Ellipsoid Column 期刊论文 OAI收割
JOURNAL OF LIQUID CHROMATOGRAPHY & RELATED TECHNOLOGIES, 2015, 卷号: 38, 期号: 1, 页码: 68-73
作者: Gu, DY (Gu, Dongyu); Yang, Y (Yang, Yi); Xin, XL (Xin, Xuelei); Aisa, HA (Aisa, Haji Akber); Ito, Y (Ito, Yoichiro)

收藏 | 浏览/下载：34/0 | 提交时间：2015/03/11

rotary-seal-free centrifuge hydrostatic counter-current chromatographic system centrifugal counter-current chromatography retention of the stationary phase protein separation peak resolution ellipsoid column

808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者: Wang Y.; Wang L.; Wang L.; Wang L.; Liu Y.

收藏 | 浏览/下载：31/0 | 提交时间：2013/03/25

808nm high power diode lasers which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers and they could lead to new applications where space weight and electrical power are critical. High efficiency devices generate less waste heat which means less strain on the cooling system and more tolerance to thermal conductivity variation a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars we fabricate a 1 3 arrays the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A the slope efficiency is 3.37 W/A. 2008 SPIE.

Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文 OAI收割
International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China
作者: Zhang J.; Li B.; Li B.; Li B.; Zhao Y.

收藏 | 浏览/下载：25/0 | 提交时间：2013/03/25

In recent years ZnMgO semiconductor alloys with a direct bandgap tunable between 3.37 eV and 7.8 eV become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m 5 m and 10 m respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns 170 ns and 230 ns for the devices with different finger pitches of 2 m 5 m and 10 m respectively..

Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure 期刊论文 iSwitch采集
Journal of infrared and millimeter waves, 2007, 卷号: 26, 期号: 2, 页码: 81-84
作者: Zhu Hui; Zheng Hou-Zhi; Li Gui-Rong; Tan Ping-Heng; Gan Hua-Dong

收藏 | 浏览/下载：25/0 | 提交时间：2019/05/12

Photo-excitation Holes Resonant tunneling Peak-to-valley current ratio (pvcr)

High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者: Liu Y.; Wang L.-J.; Wang L.-J.; Liu Y.; Liu Y.

收藏 | 浏览/下载：28/0 | 提交时间：2013/03/25

Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.

High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China
作者: Sun Y.; Wang L.; Wang L.; Wang L.; Liu Y.

收藏 | 浏览/下载：26/0 | 提交时间：2013/03/25

We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.

Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China
作者: Wang L.; Wang L.; Wang L.

收藏 | 浏览/下载：21/0 | 提交时间：2013/03/25

Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.

Experimental study of accelerated aging of small cell drift chamber prototype with radioactive source 期刊论文 OAI收割
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2005, 卷号: 29, 期号: 3, 页码: #REF!
作者: Chen C(陈昌); Ma YY(马媛媛); Liu JB(刘建北); Chen YB(陈元柏); Jin Y(金毅)

收藏 | 浏览/下载：30/0 | 提交时间：2016/04/13

drift chamber aging anode current full energy photoelectron peak