中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共9条,第1-9条 帮助

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Static and Dynamic Characteristics of In(AsSb)/GaAs Submonolayer Lasers 期刊论文  OAI收割
Ieee Journal of Quantum Electronics, 2019, 卷号: 55, 期号: 3, 页码: 7
作者:  
D.Quandt;  D.Arsenijevic;  A.Strittmatte;  D.H.Bimberg
  |  收藏  |  浏览/下载:54/0  |  提交时间:2020/08/24
Small Molecule-Modified Hole Transport Layer Targeting Low Turn-On-Voltage, Bright, and Efficient Full-Color Quantum Dot Light Emitting Diodes 期刊论文  OAI收割
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 4, 页码: 3865-3873
作者:  
Li, Jingling;  Liang, Zheng;  Su, Qiucheng;  Jin, Hu;  Wang, Kelai
  |  收藏  |  浏览/下载:18/0  |  提交时间:2020/10/29
Selective enzymatic cleavage and labeling for sensitive capillary electrophoresis laser-induced fluorescence analysis of oxidized DNA bases 期刊论文  OAI收割
JOURNAL OF CHROMATOGRAPHY A, 2015, 卷号: 1406, 页码: 324-330
作者:  
Li, Cuiping;  Wang, Hailin
收藏  |  浏览/下载:25/0  |  提交时间:2016/03/10
1.3-mu m in(ga)as quantum-dot vcsels fabricated by dielectric-free approach with surface-relief process 期刊论文  iSwitch采集
Ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93
作者:  
Xu, D. W.;  Yoon, S. F.;  Ding, Y.;  Tong, C. Z.;  Fan, W. J.
收藏  |  浏览/下载:27/0  |  提交时间:2019/05/12
1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process 期刊论文  OAI收割
ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93
Xu DW; Yoon SF; Ding Y; Tong CZ; Fan WJ; Zhao LJ
收藏  |  浏览/下载:120/2  |  提交时间:2011/07/05
High-temperature continuous-wave single-mode operation of 1.3 mu m p-doped inas-gaas quantum-dot vcsels 期刊论文  iSwitch采集
Ieee photonics technology letters, 2009, 卷号: 21, 期号: 17, 页码: 1211-1213
作者:  
Xu, D. W.;  Yoon, S. F.;  Tong, C. Z.;  Zhao, L. J.;  Ding, Y.
收藏  |  浏览/下载:30/0  |  提交时间:2019/05/12
High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs 期刊论文  OAI收割
ieee photonics technology letters, 2009, 卷号: 21, 期号: 17, 页码: 1211-1213
Xu DW; Yoon SF; Tong CZ; Zhao LJ; Ding Y; Fan WJ
收藏  |  浏览/下载:122/2  |  提交时间:2010/03/08
Temperature sensitivity dependence on cavity length in p-type doped and undoped 1.3-mu m inas-gaas quantum-dot lasers 期刊论文  iSwitch采集
Ieee photonics technology letters, 2008, 卷号: 20, 期号: 21-24, 页码: 1860-1862
作者:  
Cao, Yulian;  Yang, Tao;  Ji, Haiming;  Ma, Wenquan;  Cao, Qing
收藏  |  浏览/下载:23/0  |  提交时间:2019/05/12
Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-mu m InAs-GaAs Quantum-Dot Lasers 期刊论文  OAI收割
ieee photonics technology letters, 2008, 卷号: 20, 期号: 21-24, 页码: 1860-1862
作者:  
Yang T;  Cao YL;  Ma WQ
收藏  |  浏览/下载:243/72  |  提交时间:2010/03/08