机构

• 宁波材料技术与工程研... [6]
• 计算技术研究所 [3]
• 合肥物质科学研究院 [3]
• 苏州纳米技术与纳米仿... [1]
• 近代物理研究所 [1]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [13]
• 会议论文 [1]

发表日期

• 2023 [2]
• 2022 [2]
• 2019 [6]
• 2017 [1]
• 2016 [2]
• 2015 [1]
• 更多

学科主题

筛选

浏览/检索结果: 共14条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Frequency-Domain Inference Acceleration for Convolutional Neural Networks Using ReRAMs 期刊论文  OAI收割 IEEE TRANSACTIONS ON PARALLEL AND DISTRIBUTED SYSTEMS, 2023, 卷号: 34, 期号: 12, 页码: 3133-3146 作者:  Liu, Bosheng;  Jiang, Zhuoshen;  Wu, Yalan;  Wu, Jigang;  Chen, Xiaoming   |  收藏  |  浏览/下载：21/0  |  提交时间：2023/12/04 Frequency-domain accelerator  energy efficiency  resistive random access memory  frequency-domain convolutions   A Coordinated Model Pruning and Mapping Framework for RRAM-Based DNN Accelerators 期刊论文  OAI收割 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2023, 卷号: 42, 期号: 7, 页码: 2364-2376 作者:  Qu, Songyun;  Li, Bing;  Zhao, Shixin;  Zhang, Lei;  Wang, Ying   |  收藏  |  浏览/下载：17/0  |  提交时间：2023/12/04 AutoML  bit-pruning  deep neural networks (DNNs)  resistive random access memory (RRAM)   Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure 期刊论文  OAI收割 THIN SOLID FILMS, 2022, 卷号: 762 作者:  Cheng, Wangping;  Li, Chenhui;  Zhou, Chen;  He, Yuandi;  Wei, Renhuai   |  收藏  |  浏览/下载：45/0  |  提交时间：2022/12/23 Resistive random access memory  Resistive switching  Self-rectifying behavior  Copper chromium oxide  Thin film  Solution deposition   Saving Energy of RRAM-Based Neural Accelerator Through State-Aware Computing 期刊论文  OAI收割 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2022, 卷号: 41, 期号: 7, 页码: 2115-2127 作者:  He, Yintao;  Wang, Ying;  Li, Huawei;  Li, Xiaowei   |  收藏  |  浏览/下载：38/0  |  提交时间：2022/12/07 Computer architecture  Microprocessors  Resistance  Power demand  Training  Biological neural networks  Optimization  Low power (LP)  neural networks  processing-in-memory  resistive random-access memory (RRAM)   Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the "Thermal-House'' 期刊论文  OAI收割 IEEE ACCESS, 2019, 卷号: 7, 页码: 3897-3908 作者:  Wang, Da-Wei;  Chen, Wenchao;  Zhao, Wen-Sheng;  Zhu, Guo-Dong;  Kang, Kai   |  收藏  |  浏览/下载：34/0  |  提交时间：2019/12/18 RANDOM-ACCESS MEMORY  RESISTIVE MEMORY  INTEGRATION  BEHAVIOR  DIAMOND  ZN4SB3  MODEL   Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the "Thermal-House'' 期刊论文  OAI收割 IEEE ACCESS, 2019, 卷号: 7, 页码: 3897-3908 作者:  Wang, Da-Wei;  Chen, Wenchao;  Zhao, Wen-Sheng;  Zhu, Guo-Dong;  Kang, Kai   |  收藏  |  浏览/下载：34/0  |  提交时间：2019/12/18 RANDOM-ACCESS MEMORY  RESISTIVE MEMORY  INTEGRATION  BEHAVIOR  DIAMOND  ZN4SB3  MODEL   Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the "Thermal-House'' 期刊论文  OAI收割 IEEE ACCESS, 2019, 卷号: 7, 页码: 3897-3908 作者:  Wang, Da-Wei;  Chen, Wenchao;  Zhao, Wen-Sheng;  Zhu, Guo-Dong;  Kang, Kai   |  收藏  |  浏览/下载：21/0  |  提交时间：2019/12/18 RANDOM-ACCESS MEMORY  RESISTIVE MEMORY  INTEGRATION  BEHAVIOR  DIAMOND  ZN4SB3  MODEL   Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the "Thermal-House'' 期刊论文  OAI收割 IEEE ACCESS, 2019, 卷号: 7, 页码: 3897-3908 作者:  Wang, Da-Wei;  Chen, Wenchao;  Zhao, Wen-Sheng;  Zhu, Guo-Dong;  Kang, Kai   |  收藏  |  浏览/下载：19/0  |  提交时间：2019/12/18 RANDOM-ACCESS MEMORY  RESISTIVE MEMORY  INTEGRATION  BEHAVIOR  DIAMOND  ZN4SB3  MODEL   Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the "Thermal-House'' 期刊论文  OAI收割 IEEE ACCESS, 2019, 卷号: 7, 页码: 3897-3908 作者:  Wang, Da-Wei;  Chen, Wenchao;  Zhao, Wen-Sheng;  Zhu, Guo-Dong;  Kang, Kai   |  收藏  |  浏览/下载：31/0  |  提交时间：2019/12/18 RANDOM-ACCESS MEMORY  RESISTIVE MEMORY  INTEGRATION  BEHAVIOR  DIAMOND  ZN4SB3  MODEL   Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the "Thermal-House'' 期刊论文  OAI收割 IEEE ACCESS, 2019, 卷号: 7, 页码: 3897-3908 作者:  Wang, Da-Wei;  Chen, Wenchao;  Zhao, Wen-Sheng;  Zhu, Guo-Dong;  Kang, Kai   |  收藏  |  浏览/下载：25/0  |  提交时间：2019/12/18 RANDOM-ACCESS MEMORY  RESISTIVE MEMORY  INTEGRATION  BEHAVIOR  DIAMOND  ZN4SB3  MODEL