机构

• 半导体研究所 [12]
• 金属研究所 [1]

采集方式

• OAI收割 [7]
• iSwitch采集 [6]

内容类型

• 期刊论文 [13]

发表日期

• 2008 [4]
• 2006 [5]
• 2004 [4]

学科主题

• 半导体材料 [3]
• 半导体物理 [3]

筛选

浏览/检索结果: 共13条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Dependence of current-voltage characteristics of pseudomorphic alas/in0.53ga0.47as/inas resonant tunnelling diodes on quantum well widths 期刊论文  iSwitch采集 Chinese physics b, 2008, 卷号: 17, 期号: 12, 页码: 4645-4647 作者:  Zhang Yang;  Zhang Yu;  Zeng Yi-Ping 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Resonant tunnelling diode  Molecular beam epitaxy   Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic alas/in0.53ga0.47as/inas resonant tunnelling diodes 期刊论文  iSwitch采集 Chinese physics b, 2008, 卷号: 17, 期号: 4, 页码: 1472-1474 作者:  Zhang Yang;  Han Chun-Lin;  Gao Jian-Feng;  Zhu Zhan-Ping;  Wang Bao-Qiang 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Resonant tunnelling diode  Molecular beam epitaxy   Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes 期刊论文  OAI收割 chinese physics b, 2008, 卷号: 17, 期号: 4, 页码: 1472-1474 Zhang, Y; Han, CL; Gao, JF; Zhu, ZP; Wang, BQ; Zeng, YP 收藏  |  浏览/下载：62/6  |  提交时间：2010/03/08 resonant tunnelling diode  molecular beam epitaxy   Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths 期刊论文  OAI收割 chinese physics b, 2008, 卷号: 17, 期号: 12, 页码: 4645-4647 作者:  Zhang Y;  Zhang Y 收藏  |  浏览/下载：273/32  |  提交时间：2010/03/08 resonant tunnelling diode  molecular beam epitaxy   A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor 期刊论文  iSwitch采集 Chinese physics, 2006, 卷号: 15, 期号: 10, 页码: 2422-2426 作者:  Ma Long;  Huang Ying-Long;  Zhang Yang;  Yang Fu-Hua;  Wang Liang-Chen 收藏  |  浏览/下载：28/0  |  提交时间：2019/05/12 Resonant tunnelling diode (rtd)  High electron mobility transistor (hemt)  Molecular beam epitaxy (mbe)  Bistability  Self-latching   Nanoelectronic devices-resonant tunnelling diodes grown on inp substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文  iSwitch采集 Chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang, Y;  Zeng, YP;  Ma, L;  Wang, BQ;  Zhu, ZP 收藏  |  浏览/下载：28/0  |  提交时间：2019/05/12 Resonant tunnelling diode  Inp substrate  Molecular beam epitaxy  High resolution transmission electron microscope   Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文  OAI收割 CHINESE PHYSICS, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang, Y;  Zeng, YP;  Ma, L;  Wang, BQ;  Zhu, ZP   |  收藏  |  浏览/下载：26/0  |  提交时间：2021/02/02 resonant tunnelling diode  InP substrate  molecular beam epitaxy  high resolution transmission electron microscope   A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor 期刊论文  OAI收割 chinese physics, 2006, 卷号: 15, 期号: 10, 页码: 2422-2426 Ma L (Ma Long); Huang YL (Huang Ying-Long); Zhang Y (Zhang Yang); Yang FH (Yang Fu-Hua); Wang LC (Wang Liang-Chen) 收藏  |  浏览/下载：32/0  |  提交时间：2010/04/11 resonant tunnelling diode (RTD)  high electron mobility transistor (HEMT)  molecular beam epitaxy (MBE)  bistability  self-latching   Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文  OAI收割 chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang Y 收藏  |  浏览/下载：58/0  |  提交时间：2010/04/11 resonant tunnelling diode  InP substrate  molecular beam epitaxy  high resolution transmission electron microscope  CURRENT-VOLTAGE CHARACTERISTICS  INTRINSIC BISTABILITY  CIRCUIT   Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes 期刊论文  iSwitch采集 Chinese physics, 2004, 卷号: 13, 期号: 9, 页码: 1560-1563 作者:  Zhang, XX;  Zeng, YP;  Wang, XG;  Wang, BQ;  Zhu, ZP 收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12 Resonant tunnelling diode  Photoluminescence  Negative differential resistance  Integrated luminescence intensity