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	Accurate Measurement of Gain Saturation of Superconductor-Insulator-Superconductor Mixers with Logarithmic Power Detectors 期刊论文 OAI收割 JOURNAL OF LOW TEMPERATURE PHYSICS, 2018, 卷号: 193, 期号: 3-4, 页码: 402-407 作者: Shan, Wenlei \| 收藏 \| 浏览/下载：15/0 \| 提交时间：2019/04/08 Gain saturation Superconductor-insulator-superconductor Logarithmic power detector
	High-saturation-power and high-speed ge-on-soi p-i-n photodetectors 期刊论文 iSwitch采集 Ieee electron device letters, 2010, 卷号: 31, 期号: 7, 页码: 701-703 作者: Xue, Hai-Yun; Xue, Chun-Lai; Cheng, Bu-Wen; Yu, Yu-De; Wang, Qi-Ming 收藏 \| 浏览/下载：33/0 \| 提交时间：2019/05/12 Germanium Photodetectors Saturation power Silicon-on-insulator (soi) technology Ultrahigh-vacuum chemical vapor deposition (uhv/cvd)
	United steering of control moment gyros for small satellite with limited gimbal rate (EI CONFERENCE) 会议论文 OAI收割 2010 IEEE International Conference on Information and Automation, ICIA 2010, June 20, 2010 - June 23, 2010, Harbin, Heilongjiang, China Xu K.; Jin G.; Chen C. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 Single Gimbal Control Moment Gyroscopes (SGCMG) can could provide large control torque and quick attitude maneuver rate to small satellites without any increase in power volume and mass which will help small satellites become more powerful. Singularity avoidance and failure steering are two important problems to SGCMGs and also the main focus in this field. A new united steering law for SGCMGs with capabilities of singularity avoidance and quick transition of singularity surfaces is developed in this paper. To ensuring the existence of null motion the commanded output of controller was changed real-timely as the variation of singularity measurement of SGCMGs which can avoid the gimbal angle rate saturation. This developed steering law could help the SGCMGs provide real-time control toques in spite of limitation of gimbal angle rate. Simulation analysis is conducted for a certain 4-SGCMG system mounted on a small satellite. Simulation results indicate that the steering law is very effective in singularity avoidance. 2010 IEEE.
	High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors 期刊论文 OAI收割 ieee electron device letters, 2010, 卷号: 31, 期号: 7, 页码: 701-703 Xue HY (Xue Hai-Yun); Xue CL (Xue Chun-Lai); Cheng BW (Cheng Bu-Wen); Yu YD (Yu Yu-De); Wang QM (Wang Qi-Ming) 收藏 \| 浏览/下载：54/0 \| 提交时间：2010/11/01 Germanium photodetectors saturation power silicon-on-insulator (SOI) technology ultrahigh-vacuum chemical vapor deposition (UHV/CVD)
	The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者: Li J.; Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Li J. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs This three QWs structure can add the quantum state of QW increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.
	Broad-band semiconductor optical amplifiers 期刊论文 iSwitch采集 Journal of luminescence, 2007, 卷号: 122, 页码: 208-211 作者: Ding, Ying; Kan, Qiang; Wang, Jun-ling; Pan, Jiao-qing; Zhou, Fan 收藏 \| 浏览/下载：25/0 \| 提交时间：2019/05/12 Semiconductor optical amplifiers (soas) Bandwidth Saturation output power