机构

• 半导体研究所 [4]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [4]
• iSwitch采集 [1]

内容类型

• 期刊论文 [5]

发表日期

• 2011 [2]
• 2009 [1]
• 2006 [2]

学科主题

• 光电子学 [2]
• 半导体材料 [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As 期刊论文  OAI收割 ieee international conference on group iv photonics gfp, 2011, 页码: 314-316 Hu, Weixuan; Cheng, Buwen; Xue, Chunlai; Su, Shaojian; Liu, Zhi; Li, Yaming; Wang, Qiming 收藏  |  浏览/下载：60/0  |  提交时间：2012/06/13 Epitaxial growth  Germanium  Indium  Photonics  Semiconducting silicon compounds  Silicon   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun   |  收藏  |  浏览/下载：36/0  |  提交时间：2012/06/14 Buffer layers  Epitaxial growth  Gallium alloys  Indium antimonides  Molecular beam epitaxy  Molecular beams  Optical waveguides  Optimization  Semiconducting gallium arsenide  Semiconductor quantum wells  Tellurium  Tellurium compounds  Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds   Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition 期刊论文  OAI收割 chinese physics b, 2009, 卷号: 18, 期号: 1, 页码: 320-323 作者:  Yan Jun-Feng;  Wang Tao;  Wang Jing-Wei;  Zhang Zhi-Yong;  Zhao Wu 收藏  |  浏览/下载：214/7  |  提交时间：2010/01/12 metalorganic chemical vapour deposition (MOCVD)  antimonides  semiconducting indium compounds   Electrical properties of undoped in0.53ga0.47as grown on inp substrates by molecular beam epitaxy 期刊论文  iSwitch采集 Journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 作者:  Cui, L. J.;  Zeng, Y. P.;  Wang, B. Q.;  Zhu, Z. P. 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 Characterization  Point defects  Molecular beam epitaxy  Semiconducting gallium compounds  Semiconducting indium compounds  Semiconducting ternary compounds   Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.) 收藏  |  浏览/下载：25/0  |  提交时间：2010/04/11 characterization  point defects  molecular beam epitaxy  semiconducting gallium compounds  semiconducting indium compounds  semiconducting ternary compounds  1.55 MU-M  QUANTUM-WELLS  TEMPERATURE  GAAS