中国科学院机构知识库网格系统: 检索

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	Fabrication of a novel lumped electro-absorption modulator with a lower RC-time constant 期刊论文 OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 105002 Qiu, Yingping; Wang, Yang; Shao, Yongbo; Zhou, Daibing; Liang, Song; Zhao, Lingjuan; Wang, Wei 收藏 \| 浏览/下载：16/0 \| 提交时间：2012/06/14 Absorption Capacitance Fabrication Light extinction Semiconducting indium gallium arsenide Waveguides
	2-5m InAs/GaSb superlattices infrared photodetector 期刊论文 OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406 作者: Xu, Yingqiang; Tang, Bao; Wang, Guowei; Ren, Zhengwei; Niu, Zhichuan \| 收藏 \| 浏览/下载：32/0 \| 提交时间：2012/06/14 Alignment Atomic force microscopy Atomic spectroscopy Detectors Epitaxial growth Gallium alloys Gallium arsenide Indium arsenide Infrared detectors Molecular beam epitaxy Molecular beams Optoelectronic devices Semiconducting gallium Superlattices Transmission electron microscopy X ray diffraction Alignment Atomic Force Microscopy Atomic Spectroscopy Detectors Epitaxial Growth Gallium Alloys Gallium Arsenide Indium Arsenide Infrared Detectors Molecular Beam Epitaxy Molecular Beams Optoelectronic Devices Semiconducting Gallium Superlattices Transmission Electron Microscopy x Ray Diffraction
	Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文 OAI收割 optoelectronics letters, Optoelectronics Letters, 2011, 2011, 卷号: 7, 7, 期号: 5, 页码: 325-329, 325-329 作者: Zhu, Yan; Ni, Hai-qiao; Wang, Hai-li; He, Ji-fang; Li, Mi-feng \| 收藏 \| 浏览/下载：27/0 \| 提交时间：2012/06/14 Epitaxial growth Gallium arsenide Growth(materials) Molecular beam epitaxy Semiconducting gallium Semiconducting indium Semiconductor quantum wells Epitaxial Growth Gallium Arsenide Growth(Materials) Molecular Beam Epitaxy Semiconducting Gallium Semiconducting Indium Semiconductor Quantum Wells
	Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文 OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者: Zhang, Yu; Wang, Guowei; Tang, Bao; Xu, Yingqiang; Xu, Yun \| 收藏 \| 浏览/下载：39/0 \| 提交时间：2012/06/14 Buffer layers Epitaxial growth Gallium alloys Indium antimonides Molecular beam epitaxy Molecular beams Optical waveguides Optimization Semiconducting gallium arsenide Semiconductor quantum wells Tellurium Tellurium compounds Buffer Layers Epitaxial Growth Gallium Alloys Indium Antimonides Molecular Beam Epitaxy Molecular Beams Optical Waveguides Optimization Semiconducting Gallium Arsenide Semiconductor Quantum Wells Tellurium Tellurium Compounds
	Modification of emission wavelength of self-assembled in(ga)as/gaas quantum dots covered by inxga1-xas(0 <= x <= 0.3) layer 期刊论文 iSwitch采集 Journal of crystal growth, 2001, 卷号: 227, 页码: 1062-1068 作者: Niu, ZC; Wang, XD; Miao, ZH; Feng, SL 收藏 \| 浏览/下载：25/0 \| 提交时间：2019/05/12 Crystal morphology Quantum dots Molecular beam epitaxy Semiconducting gallium arsenide Semiconducting indium gallium arsenide
	Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文 OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏 \| 浏览/下载：24/0 \| 提交时间：2010/11/15 crystal morphology quantum dots molecular beam epitaxy semiconducting gallium arsenide semiconducting indium gallium arsenide 1.35 MU-M GAAS-SURFACES PHOTOLUMINESCENCE ISLANDS
	Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 期刊论文 OAI收割 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 1062-1068 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏 \| 浏览/下载：84/6 \| 提交时间：2010/08/12 crystal morphology quantum dots molecular beam epitaxy semiconducting gallium arsenide semiconducting indium gallium arsenide 1.35 MU-M GAAS-SURFACES PHOTOLUMINESCENCE ISLANDS