中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共6条,第1-6条 帮助

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Mid-infrared Raman amplification and wavelength conversion in dispersion engineered silicon-on-sapphire waveguides 期刊论文  OAI收割
journal of optics, 2014, 卷号: 16, 期号: 1, 页码: 015206
作者:  
Wang, Zhaolu;  Liu, Hongjun;  Huang, Nan;  Sun, Qibing;  Li, Xuefeng
收藏  |  浏览/下载:33/0  |  提交时间:2014/01/07
Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy 外文期刊  OAI收割
2005
作者:  
Wang, QY;  Wang, J;  Wang, JH;  Liu, ZL;  Lin, LY
  |  收藏  |  浏览/下载:11/0  |  提交时间:2010/11/26
Improvement of thin silicon on sapphire (sos) film materials and device performances by solid phase epitaxy 期刊论文  iSwitch采集
Materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 72, 期号: 2-3, 页码: 189-192
作者:  
Wang, QY;  Nie, JP;  Yu, F;  Liu, ZL;  Yu, YH
收藏  |  浏览/下载:17/0  |  提交时间:2019/05/12
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 期刊论文  OAI收割
materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 72, 期号: 2-3, 页码: 189-192
作者:  
Yu F
收藏  |  浏览/下载:56/0  |  提交时间:2010/08/12
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文  OAI收割
international conference on advanced materials: sympopsium m - silicon-based materials and devices, beijing, peoples r china, jun 13-18, 1999
作者:  
Yu F
收藏  |  浏览/下载:20/0  |  提交时间:2010/11/15
COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIRE FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING 期刊论文  OAI收割
materials science and engineering b-solid state materials for advanced technology, 1995, 卷号: 29, 期号: 0, 页码: 43-46
WANG QY; ZAN YD; WANG JH; YU YH
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/17