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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [4]
微电子研究所 [1]
西安光学精密机械研究... [1]
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OAI收割 [5]
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期刊论文 [4]
会议论文 [1]
外文期刊 [1]
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2014 [1]
2005 [1]
2000 [3]
1995 [1]
学科主题
半导体材料 [3]
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Mid-infrared Raman amplification and wavelength conversion in dispersion engineered silicon-on-sapphire waveguides
期刊论文
OAI收割
journal of optics, 2014, 卷号: 16, 期号: 1, 页码: 015206
作者:
Wang, Zhaolu
;
Liu, Hongjun
;
Huang, Nan
;
Sun, Qibing
;
Li, Xuefeng
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2014/01/07
stimulated Stokes Raman scattering
coherent anti-Stokes Raman scattering
wavelength conversion
Raman amplification
silicon-on-sapphire
Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy
外文期刊
OAI收割
2005
作者:
Wang, QY
;
Wang, J
;
Wang, JH
;
Liu, ZL
;
Lin, LY
  |  
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/26
Silicon-on-sapphire
Implanted Silicon
Si
Fabrication
Improvement
Epitaxy
Growth
Layers
Improvement of thin silicon on sapphire (sos) film materials and device performances by solid phase epitaxy
期刊论文
iSwitch采集
Materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 72, 期号: 2-3, 页码: 189-192
作者:
Wang, QY
;
Nie, JP
;
Yu, F
;
Liu, ZL
;
Yu, YH
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2019/05/12
Solid phase epitaxy
Silicon on sapphire (sos)
Carrier mobility
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy
期刊论文
OAI收割
materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 72, 期号: 2-3, 页码: 189-192
作者:
Yu F
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2010/08/12
solid phase epitaxy
silicon on sapphire (SOS)
carrier mobility
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy
会议论文
OAI收割
international conference on advanced materials: sympopsium m - silicon-based materials and devices, beijing, peoples r china, jun 13-18, 1999
作者:
Yu F
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/11/15
solid phase epitaxy
silicon on sapphire (SOS)
carrier mobility
COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIRE FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING
期刊论文
OAI收割
materials science and engineering b-solid state materials for advanced technology, 1995, 卷号: 29, 期号: 0, 页码: 43-46
WANG QY
;
ZAN YD
;
WANG JH
;
YU YH
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/17
SILICON ON SAPPHIRE
RAPID THERMAL ANNEALING
SOLID PHASE EPITAXY