中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [2]
力学研究所 [1]
高能物理研究所 [1]
合肥物质科学研究院 [1]
采集方式
OAI收割 [4]
iSwitch采集 [1]
内容类型
期刊论文 [5]
发表日期
2022 [1]
2020 [1]
2010 [2]
2004 [1]
学科主题
Physics [1]
光电子学 [1]
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A 3D Polycrystalline Plasticity Model for Isotropic Linear Evolution of Intragranular Misorientation with Mesoscopic Plastic Strain in Stretched or Cyclically Deformed Metals
期刊论文
OAI收割
METALS, 2022, 卷号: 12, 期号: 12, 页码: 21
作者:
Rui SS(芮少石)
;
Su, Yue
;
Zhao, Jia-Min
;
Shang, Zhi-Hao
;
Shi, Hui-Ji
  |  
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2023/02/03
2D-EBSD mapping
intragranular misorientation
KAM and GROD
isotropic linear evolution
mesoscopic plastic strain
3D polycrystalline plasticity model
Complete Strain Mapping of Nanosheets of Tantalum Disulfide
期刊论文
OAI收割
ACS APPLIED MATERIALS & INTERFACES, 2020, 卷号: 12
作者:
Cao, Yue
;
Assefa, Tadesse
;
Banerjee, Soham
;
Wieteska, Andrew
;
Wang, Dennis Zi-Ren
  |  
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2020/11/30
quasi-2D materials
nano X-ray diffraction
strain tensor
strain mapping
Young's modulus
Evaluation of both composition and strain distributions in ingan epitaxial film using x-ray diffraction techniques
期刊论文
iSwitch采集
Chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: 7
作者:
Guo Xi
;
Wang Hui
;
Jiang De-Sheng
;
Wang Yu-Tian
;
Zhao De-Gang
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2019/05/12
Ingan
In-plane grazing incidence x-ray diffraction
Reciprocal space mapping
Biaxial strain
Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802
Guo X (Guo Xi)
;
Wang H (Wang Hui)
;
Jiang DS (Jiang De-Sheng)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Zhu JJ (Zhu Jian-Jun)
;
Liu ZS (Liu Zong-Shun)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/11/02
InGaN
In-plane grazing incidence x-ray diffraction
reciprocal space mapping
biaxial strain
CRITICAL LAYER THICKNESS
OPTICAL-PROPERTIES
LATTICE-CONSTANTS
GAN
HETEROSTRUCTURES
ALLOYS
WELLS
Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures
期刊论文
OAI收割
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2004, 卷号: 18, 期号: 7, 页码: 989-998
作者:
Tan, WS
;
Shen, B
;
Sha, H
;
Cai, HL
;
Wu, XS
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2016/06/29
high resolution X-ray diffraction
metal organic chemical vapor deposition
reciprocal space mapping
semiconducting III-V nitride
strain relaxation
relaxation line model