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Structure and thickness-dependent gas sensing responses to NO2 under UV irradiation for the multilayered ZnO micro/nanostructured porous thin films 期刊论文  OAI收割
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2017, 卷号: 503, 期号: 无, 页码: 150-158
作者:  Su, Xingsong;  Duan, Guotao;  Xu, Zongke;  Zhou, Fei;  Cai, Weiping
收藏  |  浏览/下载：33/0  |  提交时间：2018/06/04
Performance Investigation of Multilayer MoS2 Thin-Film Transistors Fabricated via Mask-free Optically Induced Electrodeposition 期刊论文  OAI收割
ACS Applied Materials and Interfaces, 2017, 卷号: 9, 期号: 9, 页码: 8361-8370
作者:  Li M(李萌);  Liu N(刘娜);  Li P(李盼);  Shi JL(施佳林);  Li GY(李广勇)
  |  收藏  |  浏览/下载：17/0  |  提交时间：2017/03/26
The automatic photoresist coating machine on the spherical surface (EI CONFERENCE) 会议论文  OAI收割
2009 IEEE International Conference on Mechatronics and Automation, ICMA 2009, August 9, 2009 - August 12, 2009, Changchun, China
作者:  Li Y.;  Li Y.;  Li Y.;  Li Y.;  Wang H.
收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25
The photoresist coating is an important micro machining process widely applied in engineering. The formed film should be uniform and enough thin to assure the quality of final pattern whose line width is micrometer or nanometer. It is more difficult to process it on the spherical surface than on the flat. In this work  mathematic model of film thickness on the spherical surface is proposed by using hydromechanics. The key factors that influence the film thickness are obtained from the analysis of coating process. Then  the rational parameters which be controlled by the automatic photoresist coating machine can be final set up according to the result of the coating experiments. And the accuracy analysis of the key part which is used for the main process is performed by the error analytics. This machine not only makes the whole coating process automation  but also monitors the film quality in real time. It is adequate for aspheric surface also. 2009 IEEE.  
Optical characteristic of ion beam sputter deposited aluminum thin films (EI CONFERENCE) 会议论文  OAI收割
International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings, September 9, 2007 - September 12, 2007, Beijing, China
作者:  Yang H.;  Liu L.;  Liu L.
收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25
Aluminum is a typical active metal very easy to oxidize. An oxide surface layer of about 2-6nm quickly formed in air which adds difficulty to the optical constants determination. An ex-situ method is used to determine the optical constants of aluminum thin films. First  Second  Third  alumina (Al2O3) thin film is deposited by ion beam sputter deposition. The optical constants and thickness are determined by spectral ellipsoemtry (SE). The thickness is verified by grazing x-ray reflection (GXRR) fitting method  Al thin film with an Al2O3 cap layer on top is deposited. This cap layer is of the same deposition condition with the first step. By fitting the GXRR spectra  based on the acquired structure information  the structure information (the thickness of the aluminum and the cap layer  the ellipsometric spectra are fitted. The optical constants of the aluminum layer are extracted with the aid of the Drude model. Finally  surface roughness and the diffusion between Al-Al2O 3) is obtained  an induced transmission filter (ITF) is designed and deposited.  
Automatic spin coater for concave spherical substrate (EI CONFERENCE) 会议论文  OAI收割
3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies, AOMATT 2007: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, July 8, 2007 - July 12, 2007, Chengdu, China
Fengchao L.; Jingsong G.; Xiaoguo F.; Jingli Z.; Zhijun X.; Jun H.; Fenglin X.; Huiqing W.; Xiaohan L.
收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25
Coating photoresist film with uniform thickness on concave spherical substrate (CSS) is very important for microfabrication of concave spherical optical elements by lithography technique via a laser direct writer  for the uneven photoresist film will result in ununiformity of line width so as to influence the characters of optical elements. For improving the uniformity of photoresist film coating on CSS  an automatic spin coater was designed. The process and the mathematical model of spin coating for CSS were analyzed. Difficulties for realizing the spin coater consist of the control of multi-axis motion precisely and collaboratively  valves on/ff properly and real-timely. A flexible and well-behaved spinning motion system was achieved by tmeans of principal and subordinate CPUs control. The motion program for spin coating could be created and implemented automatically while the pressure and the valves were was watched and controlled in real time. Film coating and laser direct writing experiments on a CSS with aperture equals to 100 mm and radius equals to 370 mm were performed. Photoresist film with uniform thickness on CSS was obtained by selecting proper spin coating parameters such as rotational speed  acceleration and viscosity of the photoresist. After development  the section analysis by the atomic force microscope showed that photoresist film thickness was about 517 nm in the center and about 520 nm in the edge of substrate  the film thickness error was within 1%  and the line width was about 6.0 m with steep sides parallel each other. Experimental results indicate that uniform thickness of thin photoresist film has been coated on CSS by the spin coater  which contributes to quality improvement of laser direct writing lines on CSS.  
椭偏仪的研究进展 期刊论文  OAI收割
激光与光电子学进展, 2007, 卷号: 44, 期号: 3, 页码: 43, 49
杨坤; 王向朝; 步扬
收藏  |  浏览/下载：932/164  |  提交时间：2009/09/18
Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文  OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H.
收藏  |  浏览/下载：32/0  |  提交时间：2013/03/25
The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior  crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity  i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature  the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature  the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.  
The effect of transparent film on its surface 3-D mapping by using vertical scanning white light interferometer (EI CONFERENCE) 会议论文  OAI收割
ICO20: Optical Devices and Instruments, August 21, 2005 - August 26, 2005, Changchun, China
Wu X.; Lei F.; Yatagai T.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W.
收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25
In this paper  Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)  Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers  respectively. In PL spectra  two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature  and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases  the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm  only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.  
大视场成像椭偏仪及其应用研究 学位论文  OAI收割
作者:  谷利元
  |  收藏  |  浏览/下载：41/0  |  提交时间：2018/12/26