机构

• 物理研究所 [9]
• 半导体研究所 [6]
• 金属研究所 [3]
• 长春光学精密机械与物... [3]
• 苏州纳米技术与纳米仿... [1]
• 上海微系统与信息技术... [1]
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采集方式

• OAI收割 [23]

内容类型

• 期刊论文 [23]

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• 2023 [1]
• 2019 [1]
• 2018 [4]
• 2015 [1]
• 2012 [1]
• 2007 [1]
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学科主题

• 光电子学 [3]
• 半导体材料 [2]
• Electroche... [1]
• Materials ... [1]
• 半导体物理 [1]

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浏览/检索结果: 共23条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Single-dislocation ultraviolet light emission 期刊论文  OAI收割 ACTA MATERIALIA, 2023, 卷号: 257, 页码: 9 作者:  Yan, Xuexi;  Jin, Qianqian;  Jiang, Yixiao   |  收藏  |   Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field 期刊论文  OAI收割 Nanoscale Research Letters, 2019, 卷号: 14, 期号: 1 作者:  Li,Dabing;  Feng,Zhe Chuan;  Luo,Xuguang;  Wang,Yong;  Kai,Cuihong   |  收藏  |   Kinematic and isotropic strain hardening in copper with highly aligned nanoscale twins 期刊论文  OAI收割 MATERIALS RESEARCH LETTERS, 2018, 卷号: 6, 期号: 6, 页码: 333-338 作者:  Wang, H;  You, ZS;  Lu, L   |  收藏  |   Kinematic and isotropic strain hardening in copper with highly aligned nanoscale twins 期刊论文  OAI收割 MATERIALS RESEARCH LETTERS, 2018, 卷号: 6, 期号: 6, 页码: 333-338 作者:  Wang, Hao;  You, Zesheng;  Lu, Lei   |  收藏  |   The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD 期刊论文  OAI收割 Journal of Materials Chemistry C, 2018, 卷号: 6, 期号: 18, 页码: 4936-4942 作者:  Chen, Y. R.;  Zhang, Z. W.;  Jiang, H.;  Li, Z. M.;  Miao, G. Q.   |  收藏  |   The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition 期刊论文  OAI收割 Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728 作者:  Jiang, K.;  Sun, X. J.;  Ben, J. W.;  Jia, Y. P.;  Liu, H. N.   |  收藏  |   Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates 期刊论文  OAI收割 THIN SOLID FILMS, 2015, 卷号: 593, 页码: 5 作者:  Li, KL(李奎龙);  Sun, YR(孙玉润);  Dong, JR(董建荣);  He, Y(何洋);  Zeng, XL(曾徐路) 收藏  |   Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9 Sun, HH; Guo, FY; Li, DY; Wang, L; Zhao, DG; Zhao, LC 收藏  |   Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文  OAI收割 journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521 Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H 收藏  |   The 30 degrees rotation domains in wurtzite ZnO films 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 290, 期号: 2, 页码: 631 Liu, YZ; Ying, MJ; Du, XL; Jia, JF; Xue, QK; Han, XD; Zhang, Z 收藏  |