机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [14]

发表日期

• 2003 [14]

学科主题

• 半导体物理 [14]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 发表日期：2003    学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文  OAI收割 chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063 Fang ZD; Gong Z; Miao ZH; Xu XH; Ni HQ; Niu ZC 收藏  |  浏览/下载：64/0  |  提交时间：2010/08/12 1.3 MU-M  MOLECULAR-BEAM EPITAXY  TEMPERATURE-DEPENDENCE  LASING CHARACTERISTICS  LASERS  WAVELENGTH  SEPARATION  LINEWIDTH  PROPERTY  GAIN   RBS/channeling study and photoluminscence properties of Er-implanted GaN 期刊论文  OAI收割 acta physica sinica, 2003, 卷号: 52, 期号: 10, 页码: 2558-2562 Song SF; Zhou SQ; Chen WD; Zhu JJ; Chen CY; Xu ZJ 收藏  |  浏览/下载：235/3  |  提交时间：2010/08/12 GaN  erbium  Raman back scattering  photoluminscence  DOPED GAN  ERBIUM  PHOTOLUMINESCENCE  ELECTROLUMINESCENCE   Green-light-emitting ZnSe nanowires fabricated via vapor phase growth 期刊论文  OAI收割 applied physics letters, 2003, 卷号: 82, 期号: 19, 页码: 3330-3332 Xiang B; Zhang HZ; Li GH; Yang FH; Su FH; Wang RM; Xu J; Lu GW; Sun XC; Zhao Q; Yu DP 收藏  |  浏览/下载：111/0  |  提交时间：2010/08/12 PHYSICAL EVAPORATION  QUANTUM WIRES  DOTS  DEPOSITION   Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film 期刊论文  OAI收割 chinese physics, 2003, 卷号: 12, 期号: 4, 页码: 438-442 Chen CY; Chen WD; Li GH; Song SF; Ding K; Xu ZJ 收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12 a-Si domain  erbium  photoluminescence  SI NANOCRYSTALS  LUMINESCENCE  ERBIUM  PHOTOLUMINESCENCE  EXCITATION  OXIDE   Measurement of gain spectrum for semiconductor lasers utilizing integrations of product of emission spectrum and a phase function over one mode interval 期刊论文  OAI收割 ieee photonics technology letters, 2003, 卷号: 15, 期号: 11, 页码: 1510-1512 作者:  Yu LJ 收藏  |  浏览/下载：605/10  |  提交时间：2010/08/12 gain measurement  optical spectrum analyzer (OSA)  semiconductor lasers  DIODES   A method to obtain ground state electroluminescence from 1.3 mu m emitting InAs/GaAs quantum dots grown by molecular beam epitaxy 期刊论文  OAI收割 chinese physics, 2003, 卷号: 12, 期号: 1, 页码: 97-99 Kong YC; Zhou DY; Lan Q; Liu JL; Miao ZH; Feng SL; Niu ZC 收藏  |  浏览/下载：28/0  |  提交时间：2010/08/12 quantum dots  electroluminescence  state filling effect  OPTICAL-PROPERTIES  WAVELENGTH  EMISSION  LASER  GAAS  DEPENDENCE  LAYER   Size evolution and optical properties of self-assembled InAs quantum dots on different matrix 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2003, 卷号: 19, 期号: 3, 页码: 292-297 作者:  Xu B 收藏  |  浏览/下载：57/0  |  提交时间：2010/08/12 self-assembled  MBE  quantum dots  photoluminescence  1.3 MU-M  TEMPERATURE-DEPENDENCE  EXCITED-STATES  INXGA1-XAS  LASERS  INP   Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers 期刊论文  OAI收割 chinese physics letters, 2003, 卷号: 20, 期号: 8, 页码: 1261-1263 作者:  Xu YQ 收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12 GAINNAS  LUMINESCENCE  DIODES  ALLOYS   Measurement of gain spectrum for Fabry-Perot semiconductor lasers by the Fourier transform method with a deconvolution process 期刊论文  OAI收割 ieee journal of quantum electronics, 2003, 卷号: 39, 期号: 6, 页码: 716-721 作者:  Yu LJ 收藏  |  浏览/下载：31/0  |  提交时间：2010/08/12 Fourier transform method  gain measurement  optical spectrum analyzer (OSA)  semiconductor laser  EMISSION-SPECTRA  DIODES   Luminescence properties of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文  OAI收割 physics of low-dimensional structures, 2003, 期号: 1-2, 页码: 27-33 Fang, ZD; Gong, Z; Miao, ZH; Xu, XH; Ni, HQ; Niu, ZC 收藏  |  浏览/下载：48/14  |  提交时间：2010/03/09 TEMPERATURE-DEPENDENCE  PHOTOLUMINESCENCE  SEPARATION  WAVELENGTH  LASERS