机构

• 半导体研究所 [8]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [8]

发表日期

• 2015 [2]
• 2013 [3]
• 2012 [1]
• 2011 [2]

学科主题

• 半导体材料 [6]
• 微电子学 [2]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth 期刊论文  OAI收割 nanomaterials, 2015, 卷号: 5, 期号: 3, 页码: 1532-1543 Xingfang Liu; Yu Chen; Changzheng Sun; Min Guan; Yang Zhang; Feng Zhang; Guosheng Sun; Yiping Zeng 收藏  |  浏览/下载：16/0  |  提交时间：2016/03/29 Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates 期刊论文  OAI收割 applied surface science, 2015, 卷号: 353, 页码: 744-749 Guoguo Yan; Feng Zhang; Yingxi Niu; Fei Yang; Xingfang Liu; Lei Wang; Wanshun Zhao; Guosheng Sun; Yiping Zeng 收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29 Optimization for MEMS filter to reduce feed-through and an analysis method based on polar diagram 期刊论文  OAI收割 advanced materials research, 2013, 卷号: 677, 页码: 74-78 Han, Guowei; Si, Chaowei; Ning, Jing; Zhao, Yongmei; Sun, Guosheng; Yang, Fuhua 收藏  |  浏览/下载：10/0  |  提交时间：2014/05/08 Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene-Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources 期刊论文  OAI收割 materials, 2013, 卷号: 6, 期号: 4, 页码: 1543-1553 Liu, Xingfang; Sun, Guosheng; Liu, Bin; Yan, Guoguo; Guan, Min; Zhang, Yang; Zhang, Feng; Chen, Yu; Dong, Lin; Zheng, Liu; Liu, Shengbei; Tian, Lixin; Wang, Lei; Zhao, Wanshun; Zeng, Yiping 收藏  |  浏览/下载：27/0  |  提交时间：2013/08/27 Feed-through cancellation of a MEMS filter using the difference method and analysis of the induced notch 期刊论文  OAI收割 journal of semiconductors, 2013, 卷号: 34, 期号: 4, 页码: 045006 Han, Guowei; Si, Chaowei; Ning, Jin; Zhong, Weiwei; Sun, Guosheng; Zhao, Yongmei; Yang, Fuhua 收藏  |  浏览/下载：55/0  |  提交时间：2014/04/28 Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC 期刊论文  OAI收割 materials science forum, 2012, 卷号: 717-720, 页码: 105-108 Zhao, Wanshun; Sun, Guosheng; Wu, Hailei; Yan, Guoguo; Zheng, Liu; Dong, Lin; Wang, Lei; Liu, Xingfang; Yang, Lijun 收藏  |  浏览/下载：17/0  |  提交时间：2013/04/22 Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002 Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14 Aluminum  Annealing  Ion implantation  Pressure effects  Semiconducting silicon compounds  Silicon carbide  Surface roughness   High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005 Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：23/0  |  提交时间：2012/06/14 Epitaxial growth  Ethylene  Growth rate  Morphology  Surface roughness