机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 会议论文 [10]
• 期刊论文 [4]

发表日期

• 2010 [1]
• 2006 [1]
• 2004 [9]
• 2003 [1]
• 1999 [2]

学科主题

• 半导体材料 [14]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis 期刊论文  OAI收割 science china-technological sciences, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005 Huang TM (Huang TianMao); Chen NF (Chen NuoFu); Zhang XW (Zhang XingWang); Bai YM (BaiYiMing); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Zhang H (Zhang Han); Wang Y (Wang Yu); Wang YS (Wang YanShuo); Yang XL (Yang XiaoLi) 收藏  |  浏览/下载：25/0  |  提交时间：2010/11/14 polycrystalline silicon thin film  aluminum induced crystallization  (111) preferred orientation  INDUCED LAYER-EXCHANGE  AMORPHOUS-SILICON  SOLAR-CELLS  GLASS  SI  ORIENTATION  MODEL   Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots 期刊论文  OAI收割 chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1315-1319 Zhou WM; Wang CY; Chen YH; Wang ZG 收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11 quantum dots  strain and stress distribution  strain energy  finite element method  ISLANDS  GROWTH  GAAS  GAAS(001)  EVOLUTION   Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Zhao, YW; Dong, ZY; Zhang, YH; Li, CJ 收藏  |  浏览/下载：177/52  |  提交时间：2010/03/29 DEEP-LEVEL DEFECTS  FE-DOPED INP  GROWN INP  SPECTROSCOPY  RESONANCE  WAFER   Growth and characterization of 4H-SiC by horizontal hot-wall CVD 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Sun, GS; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM 收藏  |  浏览/下载：134/34  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Gao, X; Li, JM; Sun, GS; Zhang, NH; Wang, L; Zhao, WS; Zeng, YP 收藏  |  浏览/下载：135/48  |  提交时间：2010/03/29 SI(111)  ALN   Raman scattering study on diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Islam MR; Chen NF; Yamada M 收藏  |  浏览/下载：130/33  |  提交时间：2010/03/29 Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Jin P;  Xu B 收藏  |  浏览/下载：127/16  |  提交时间：2010/03/29 QUANTUM DOTS   Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Sun, J; Hu, LZ; Sun, YC; Wang, ZY 收藏  |  浏览/下载：59/0  |  提交时间：2010/03/29 GROWTH   Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B;  Ye XL;  Jin P 收藏  |  浏览/下载：92/22  |  提交时间：2010/03/29 DOTS   Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001) 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Wang YL; Wu J; Chen YH; Wang ZG; Zeng YP 收藏  |  浏览/下载：124/17  |  提交时间：2010/03/29 LAYER-ORDERING ORIENTATION