机构

• 半导体研究所 [20]

采集方式

• OAI收割 [20]

内容类型

• 期刊论文 [17]
• 会议论文 [3]

发表日期

• 2011 [2]
• 2010 [2]
• 2009 [1]
• 2008 [3]
• 2007 [1]
• 2006 [4]
• 更多

学科主题

• 半导体材料 [20]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process 期刊论文  OAI收割 ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93 Xu DW; Yoon SF; Ding Y; Tong CZ; Fan WJ; Zhao LJ 收藏  |  浏览/下载：100/2  |  提交时间：2011/07/05 Dielectric-free approach  quantum dot (QD)  surface-relief technique  vertical-cavity surface-emitting lasers (VCSELs)  EMITTING LASERS   Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 2, 页码: 24009, 24009 作者:  Wang, Liancheng;  Guo, Enqing;  Liu, Zhiqiang;  Yi, Xiaoyan;  Wang, Guohong   |  收藏  |  浏览/下载：13/0  |  提交时间：2012/06/14 Gallium nitride  Leakage currents  Light emission  Light emitting diodes  Metallizing  Polarization  Testing  Water analysis  Gallium Nitride  Leakage Currents  Light Emission  Light Emitting Diodes  Metallizing  Polarization  Testing  Water Analysis   Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088101 Sun GS (Sun Guo-Sheng); Liu XF (Liu Xing-Fang); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Yang T (Yang Ting); Wu HL (Wu Hai-Lei); Yan GG (Yan Guo-Guo); Zhao YM (Zhao Yong-Mei); Ning J (Ning Jin); Zeng YP (Zeng Yi-Ping); Li JM (Li Jin-Min) 收藏  |  浏览/下载：172/19  |  提交时间：2010/09/07 3C-SiC  heteroepitaxial  multi-wafer  uniformity   In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073703 Wang Y (Wang Y.); Jiang Y (Jiang Y.); Zhang XW (Zhang X. W.); Yin ZG (Yin Z. G.) 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/14 BARRIER STRUCTURE  MAGNETIC-FIELD  POLARIZATION  CONDUCTANCE  DEVICE   An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文  OAI收割 solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者:  Zhang ML;  Hou QF 收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08 AlGaN/AlN/GaN  HEMT  MOCVD  SiC substrate  Power device   AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Hou QF;  Zhang ML 收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09 ALGAN/GAN HEMTS   Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure 期刊论文  OAI收割 journal of non-crystalline solids, 2008, 卷号: 354, 期号: 19-25, 页码: 2282-2285 Kazanskii, AG; Kong, GL; Zeng, XB; Hao, HY; Liu, FZ 收藏  |  浏览/下载：104/29  |  提交时间：2010/03/08 silicon  conductivity  chemical vapor deposition  microcrystallinity  absorption  photoconductivity   Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文  OAI收割 chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708 Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min) 收藏  |  浏览/下载：70/0  |  提交时间：2010/03/29 ELECTRON-MOBILITY TRANSISTORS   Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文  OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Wang, CM; Wang, XL; Hu, GX; Wang, JX; Li, JP 收藏  |  浏览/下载：119/30  |  提交时间：2010/03/29 HIGH BREAKDOWN VOLTAGE  MOBILITY TRANSISTORS  HETEROSTRUCTURES  SAPPHIRE  GANHEMTS