机构

• 半导体研究所 [54]

采集方式

• OAI收割 [54]

内容类型

• 期刊论文 [50]
• 会议论文 [4]

发表日期

• 2011 [3]
• 2010 [1]
• 2009 [4]
• 2008 [7]
• 2007 [4]
• 2006 [4]
• 更多

学科主题

• 半导体物理 [54]

筛选

浏览/检索结果: 共54条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402 Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG 收藏  |  浏览/下载：33/2  |  提交时间：2011/07/05 FUNDAMENTAL-BAND GAP  INDIUM NITRIDE  BUFFER LAYER  DEPENDENCE  SAPPHIRE  MOCVD   Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying   |  收藏  |  浏览/下载：73/0  |  提交时间：2012/06/14 Atomic force microscopy  Buffer layers  Epitaxial growth  Gallium alloys  Gallium arsenide  Germanium  Growth temperature  High resolution transmission electron microscopy  Molecular beam epitaxy  Molecular beams  Semiconducting gallium  Semiconductor device structures  Semiconductor quantum wells  Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells   2-5m InAs/GaSb superlattices infrared photodetector 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406 作者:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan   |  收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14 Alignment  Atomic force microscopy  Atomic spectroscopy  Detectors  Epitaxial growth  Gallium alloys  Gallium arsenide  Indium arsenide  Infrared detectors  Molecular beam epitaxy  Molecular beams  Optoelectronic devices  Semiconducting gallium  Superlattices  Transmission electron microscopy  X ray diffraction  Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction   Ferromagnetic properties in Fe-doped ZnS thin films 期刊论文  OAI收割 optoelectronics and advanced materials-rapid communications, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 2010, 卷号: 4, 4, 期号: 12, 页码: 2072-2075, 2072-2075 作者:  Zhu F;  Dong S;  Yang GD;  Zhu, F, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhufeng@semi.ac.cn   |  收藏  |  浏览/下载：38/1  |  提交时间：2011/07/06 Fe-doped ZnS  First principles calculation  Ferromagnetic properties  High Curie temperature  OPTICAL-PROPERTIES  SEMICONDUCTORS  Fe-doped Zns  First Principles Calculation  Ferromagnetic Properties  High Curie Temperature  Optical-properties  Semiconductors   Size dependence of biexciton binding energy in single InAs/GaAs quantum dots 期刊论文  OAI收割 chinese physics b, 2009, 卷号: 18, 期号: 6, 页码: 2258-2263 Don XM; Sun BQ; Huang SS; Ni HQ; Niu ZC; Yang FH; Jia R 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/08 biexcition binding energy  single quantum dots  exciton molecular model  Heitler-London method   Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates 期刊论文  OAI收割 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 5, 页码: art. no. 055310 作者:  Ye XL;  Pan JQ;  Liang S 收藏  |  浏览/下载：127/30  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  MULTIATOMIC STEPS  ISLANDS  GROWTH  FABRICATION  EPITAXY   Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: art. no. 262105 作者:  Zhang XW;  Yin ZG;  You JB 收藏  |  浏览/下载：99/13  |  提交时间：2010/03/08 atomic force microscopy  field emission  hydrogen  II-VI semiconductors  plasma materials processing  sputter deposition  wide band gap semiconductors  work function  zinc compounds   Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 4, 页码: art. no. 047802 作者:  Xu YQ 收藏  |  浏览/下载：205/51  |  提交时间：2010/03/08 INAS   Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films 期刊论文  OAI收割 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 16, 页码: art. no. 165004 Sun, LL; Yan, FW; Gao, HY; Zhang, HX; Zeng, YP; Wang, GH; Li, JM 收藏  |  浏览/下载：48/0  |  提交时间：2010/03/08 P-TYPE GAN  SAPPHIRE  PROPERTY   Spectroscopy of long wavelength coupled quantum dots 期刊论文  OAI收割 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 17, 页码: art. no. 175102 Xiong, YH; Huang, SS; Ni, HQ; Dou, XM; Niu, ZC 收藏  |  浏览/下载：84/1  |  提交时间：2010/03/08 ELECTRON-SPIN  EMISSION  ISLANDS  GROWTH  STATES