机构

• 半导体研究所 [53]

采集方式

• OAI收割 [53]

内容类型

• 期刊论文 [47]
• 会议论文 [6]

发表日期

• 2011 [1]
• 2010 [2]
• 2009 [3]
• 2008 [1]
• 2007 [1]
• 2006 [1]
• 更多

学科主题

• 半导体物理 [53]

筛选

浏览/检索结果: 共53条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Dynamics of dense spin ensemble excited in a barrier layer and detected in a well 期刊论文  OAI收割 science china-physics mechanics & astronomy, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 2011, 卷号: 54, 54, 期号: 6, 页码: 1108-1111, 1108-1111 作者:  Shen C;  Wang LG;  Zhu H;  Zheng HZ;  Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hzzheng@red.semi.ac.cn   |  收藏  |  浏览/下载：62/0  |  提交时间：2011/07/05 spin polarized transport  optical orientation  dense spin relaxation  quantum well  TRANSPORT  Spin Polarized Transport  Optical Orientation  Dense Spin Relaxation  Quantum Well  Transport   First-principles study of ground-state properties and high pressure behavior of ThO2 期刊论文  OAI收割 journal of nuclear materials, JOURNAL OF NUCLEAR MATERIALS, 2010, 2010, 卷号: 399, 399, 期号: 2-3, 页码: 181-188, 181-188 作者:  Wang BT (Wang Bao-Tian);  Shi HL (Shi Hongliang);  Li WD (Li Wei-Dong);  Zhang P (Zhang Ping);  Zhang, P, Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China. 电子邮箱地址: zhang_ping@iapcm.ac.cn   |  收藏  |  浏览/下载：34/0  |  提交时间：2010/06/18 ELASTIC PROPERTIES  Elastic Properties  Actinide Dioxides  Thorium-dioxide  Single-crystal  Stability  ACTINIDE DIOXIDES  THORIUM-DIOXIDE  SINGLE-CRYSTAL  STABILITY   Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs 期刊论文  OAI收割 science china-physics mechanics & astronomy, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 2010, 卷号: 53, 53, 期号: 5, 页码: 779-782, 779-782 作者:  Luo J (Luo Jing);  Zheng HZ (Zheng HouZhi);  Shen C (Shen Chao);  Zhang H (Zhang Hao);  Zhu K (Zhu Ke)   |  收藏  |  浏览/下载：50/0  |  提交时间：2010/05/24 dilute magnetic semiconductor  Dilute Magnetic Semiconductor  Magneto-crystalline Anisotropy  Time-resolved Kerr Rotation  Coherent Precession  magneto-crystalline anisotropy  time-resolved Kerr rotation  coherent precession   Transient Reorientation of a Doped Liquid Crystal System under a Short Laser Pulse 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 8, 页码: art. no. 086108 Li T; Xiang Y; Liu YK; Wang J; Yang SL 收藏  |  浏览/下载：94/0  |  提交时间：2010/03/08 INDUCED FREEDERICKSZ TRANSITION  AZO-DYE  NONLINEARITY   Fine structural splitting and exciton spin relaxation in single InAs quantum dots 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103516 Dou XM; Sun BQ; Xiong YH; Niu ZC; Ni HQ; Xu ZY 收藏  |  浏览/下载：99/0  |  提交时间：2010/03/08 deformation  excitons  fine structure  III-V semiconductors  indium compounds  phonons  photoluminescence  semiconductor quantum dots  spin dynamics   Magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO: First-principles calculations 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 023910 Shi HL; Zhang P; Li SS; Xia JB 收藏  |  浏览/下载：106/25  |  提交时间：2010/03/08 FERROMAGNETIC SEMICONDUCTOR  BAND-STRUCTURE  STABILIZATION  INJECTION   Optical properties of InGaAs/GaAs quantum chains 期刊论文  OAI收割 acta physica sinica, 2008, 卷号: 57, 期号: 3, 页码: 1908-1912 Wang, BR; Sun, Z; Xu, ZY; Sun, BQ; Ji, Y; Wang, ZM; Salamo, GJ 收藏  |  浏览/下载：69/1  |  提交时间：2010/03/08 InGaAs/GaAs  quantum dots  quantum chains   Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property 期刊论文  OAI收割 acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541 Zhao, YW (Zhao You-Wen); Miao, SS (Miao Shan-Shan); Dong, ZY (Dong Zhi-Yuan); Lue, XH (Lue Xiao-Hong); Deng, AH (Deng Ai-Hong); Yang, J (Yang Jun); Wang, B (Wang Bo) 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/29 indium phosphide   Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文  OAI收割 acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412 Song SF; Chen WD; Xu ZJ; Xu XR 收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11 GaN  Er  Pr-implautation  deep level transient spectroscopy  N-TYPE GAN  DEFECTS  EPITAXY  TRAPS   Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文  OAI收割 17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005 Zhao, YW; Dong, ZY 收藏  |  浏览/下载：220/68  |  提交时间：2010/03/29 ENCAPSULATED CZOCHRALSKI INP  SEMICONDUCTOR COMPOUND-CRYSTALS  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  DEEP-LEVEL DEFECTS  ANNEALING AMBIENT  POINT-DEFECTS  FE  PHOSPHIDE  DONORS