机构

• 半导体研究所 [13]

采集方式

• OAI收割 [13]

内容类型

• 期刊论文 [13]

发表日期

• 2016 [1]
• 2015 [4]
• 2014 [1]
• 2011 [1]
• 2009 [1]
• 2005 [3]
• 更多

学科主题

• 半导体材料 [13]

筛选

浏览/检索结果: 共13条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs 期刊论文  OAI收割 IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 8, 页码: 3084-3087 Xiangting Kong; Renrong Liang; Xuliang Zhou; Shiyan Li; Mengqi Wang; Honggang Liu; Jing Wang; Wei Wang; Jiaoqing Pan 收藏  |  浏览/下载：31/0  |  提交时间：2017/03/10 High-Mobility In0.23Ga0.77As Channel MOSFETs Grown on Ge/Si Virtual Substrate by MOCVD 期刊论文  OAI收割 ieee transactions on electron devices, 2015, 卷号: 62, 期号: 5, 页码: 1456-1459 Xiangting Kong; Xuliang Zhou; Shiyan Li; Hudong Chang; Honggang Liu; Jing Wang; Renrong Liang; Wei Wang; Jiaoqing Pan 收藏  |  浏览/下载：23/0  |  提交时间：2016/03/23 Evaluation of growth mode and optimization of growth parameters for GaAs epitaxy in V-shaped 期刊论文  OAI收割 journal of crystal growth, 2015, 卷号: 426, 页码: 147-152 Shiyan Li; Xuliang Zhou; Xiangting Kong; Mengke Li; Junping Mi; Jing Bian; Wei Wang; Jiaoqing Pan 收藏  |  浏览/下载：20/0  |  提交时间：2016/03/23 Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology 期刊论文  OAI收割 chinese physics letters, 2015, 卷号: 32, 期号: 5, 页码: 54205-54207 DaiBing Zhou; HuiTao Wang; RuiKang Zhang; BaoJun Wang; Jing Bian; Xin An; Dan Lu; LingJuan Zhao; HongLiang Zhu; Chen Ji; Wei Wang 收藏  |  浏览/下载：24/0  |  提交时间：2016/03/23 Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio 期刊论文  OAI收割 chinese physics letters, 2015, 卷号: 32, 期号: 2, 页码: 028101 Li ShiYan; Zhou XuLiang; Kong XiangTing; Li MengKe; Mi JunPing; Bian Jing; Wang Wei; Pan JiaoQing 收藏  |  浏览/下载：25/0  |  提交时间：2016/03/23 Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer 期刊论文  OAI收割 chinese physics letters, 2014, 卷号: 31, 期号: 12, 页码: 128101 Zhou Xu-Liang; Pan Jiao-Qing; Yu Hong-Yan; Li Shi-Yan; Wang Bao-Jun; Bian Jing; Wang Wei 收藏  |  浏览/下载：13/0  |  提交时间：2015/03/19 A high-power tapered and cascaded active multimode interferometer semiconductor laser diode 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 5, 页码: 54007 Lai, Weijiang; Cheng, Yuanbing; Yao, Chen; Zhou, Daibing; Bian, Jing; Zhao, Lingjuan; Wu, Jian 收藏  |  浏览/下载：19/0  |  提交时间：2012/06/14 Diodes  High power lasers  Interferometers  Power electronics  Semiconductor diodes   Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film 期刊论文  OAI收割 半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 151-154 作者:  Li Yan 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/23 An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter 期刊论文  OAI收割 半导体学报, 2005, 卷号: 26, 期号: 8, 页码: 1504-1508 作者:  Wang Wei;  Wang Wei 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/23 A Wavelength Tunable DBR Laser Integrated with an Electro Absorption Modulator by a Combined Method of SAG and QWI 期刊论文  OAI收割 半导体学报, 2005, 卷号: 26, 期号: 11, 页码: 2053-2057 作者:  Zhang Jing;  Wang Wei;  Wang Wei 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/23