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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [96]
采集方式
OAI收割 [96]
内容类型
期刊论文 [87]
会议论文 [9]
发表日期
2011 [4]
2010 [4]
2009 [5]
2008 [3]
2007 [5]
2006 [8]
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学科主题
半导体物理 [96]
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Synthesis of Homogenous Bilayer Graphene on Industrial Cu Foil
期刊论文
OAI收割
chinese physics letters, CHINESE PHYSICS LETTERS, 2014, 2014, 卷号: 31, 31, 期号: 6, 页码: 067202, 067202
作者:
Luo, WG
;
Wang, HF
;
Cai, KM
;
Han, WP
;
Tan, PH
  |  
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2015/03/25
High Quality Pseudomorphic In-0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area Transmission Electro-Absorption Modulators
期刊论文
OAI收割
chinese physics letters, CHINESE PHYSICS LETTERS, 2013, 2013, 卷号: 30, 30, 期号: 4, 页码: 046102, 046102
作者:
Yang Xiao-Hong
;
Liu Shao-Qing
;
Ni Hai-Qiao
;
Li Mi-Feng
;
Li Liang
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2013/09/17
Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 98, 98, 期号: 26, 页码: 262501, 262501
作者:
Yu GQ
;
Chen L
;
Rizwan S
;
Zhao JH
;
Xu K
  |  
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2012/01/06
TEMPERATURE
GA1-XMNXAS
TRANSPORT
EPILAYERS
(GA
MN)AS
FILMS
Temperature
(Ga
Ga1-xmnxas
Mn)As
Transport
Epilayers
Films
Preparation and photoluminescence study of patterned substrate quantum wires
期刊论文
OAI收割
acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 2, 页码: article no.20703, Article no.20703
作者:
Wang XP
;
Yang XH
;
Han Q
;
Ju YL
;
Du Y
  |  
收藏
  |  
浏览/下载:57/7
  |  
提交时间:2011/07/05
V-groove substrate
quantum wires
GaAs
EPITAXIAL-GROWTH
TRANSISTOR
V-groove Substrate
Quantum Wires
Gaas
Epitaxial-growth
Transistor
Detection of large in-plane spin-dephasing anisotropy in [100]-grown GaAs/AlGaAs quantum wells
期刊论文
OAI收割
physica e-low-dimensional systems & nanostructures, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2011, 2011, 卷号: 43, 43, 期号: 5, 页码: 1127-1130, 1127-1130
作者:
Han LF
;
Zhang XH
;
Ni HQ
;
Niu ZC
;
Zhang, XH, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xinhuiz@semi.ac.cn
  |  
收藏
  |  
浏览/下载:47/3
  |  
提交时间:2011/07/05
ZINCBLENDE HETEROSTRUCTURES
RELAXATION ANISOTROPY
SYSTEMS
SPINTRONICS
DYNAMICS
Zincblende Heterostructures
Relaxation Anisotropy
Systems
Spintronics
Dynamics
Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
期刊论文
OAI收割
nanoscale research letters, NANOSCALE RESEARCH LETTERS, 2011, 2011, 卷号: 6, 6, 页码: article no.84, Article no.84
作者:
Han LF
;
Zhu YG
;
Zhang XH
;
Tan PH
;
Ni HQ
  |  
收藏
  |  
浏览/下载:46/2
  |  
提交时间:2011/07/05
ROOM-TEMPERATURE
Room-temperature
The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots
期刊论文
OAI收割
journal of optics, JOURNAL OF OPTICS, 2010, 2010, 卷号: 12, 12, 期号: 5, 页码: art. no. 055203, Art. No. 055203
作者:
Huang X (Huang X.)
;
Zhang XH (Zhang X. H.)
;
Zhu YG (Zhu Y. G.)
;
Li T (Li T.)
;
Han LF (Han L. F.)
  |  
收藏
  |  
浏览/下载:79/6
  |  
提交时间:2010/08/17
InAs quantum dots
Inas Quantum Dots
Nonlinear Refraction
Reflection Z-scan
Dc Electric Field Effect
Electrooptic Properties
Saturable Absorber
Optical-properties
Well Structures
Single-beam
Band-gap
Electroabsorption
Absorption
Reflection
Dependence
nonlinear refraction
reflection Z-scan
dc electric field effect
ELECTROOPTIC PROPERTIES
SATURABLE ABSORBER
OPTICAL-PROPERTIES
WELL STRUCTURES
SINGLE-BEAM
BAND-GAP
ELECTROABSORPTION
ABSORPTION
REFLECTION
DEPENDENCE
Electron spin dynamics in heavily Mn-doped (Ga,Mn)As
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2010, 2010, 卷号: 97, 97, 期号: 26, 页码: article no.262109, Article no.262109
作者:
Zhu YG
;
Han LF
;
Chen L
;
Zhang XH
;
Zhao JH
  |  
收藏
  |  
浏览/下载:63/6
  |  
提交时间:2011/07/05
SEMICONDUCTORS
TEMPERATURE
GAAS
Semiconductors
Temperature
Gaas
The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy
期刊论文
OAI收割
optics communications, OPTICS COMMUNICATIONS, 2010, 2010, 卷号: 283, 283, 期号: 7, 页码: 1510-1513, 1510-1513
作者:
Huang X
;
Zhang XH
;
Zhu YG
;
Li T
;
Han LF
  |  
收藏
  |  
浏览/下载:145/2
  |  
提交时间:2010/04/22
InAs quantum dots
Inas Quantum Dots
Nonlinear Refraction
Reflection Z-scan
Reflection Z-scan
Optical Nonlinearities
2-photon Absorption
Saturable Absorber
Well Structures
Single-beam
Electroabsorption
Dispersion
Solids
Gaas
Nonlinear refraction
Reflection Z-scan
REFLECTION Z-SCAN
OPTICAL NONLINEARITIES
2-PHOTON ABSORPTION
SATURABLE ABSORBER
WELL STRUCTURES
SINGLE-BEAM
ELECTROABSORPTION
DISPERSION
SOLIDS
GAAS
Temperature dependence of hole spin relaxation in ultrathin InAs monolayers
期刊论文
OAI收割
physica e-low-dimensional systems & nanostructures, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 2010, 卷号: 42, 42, 期号: 5, 页码: 1597-1600, 1597-1600
作者:
Li T
;
Zhang XH
;
Zhu YG
;
Huang X
;
Han LF
  |  
收藏
  |  
浏览/下载:80/0
  |  
提交时间:2010/04/28
Ultrathin InAs monolayer
Ultrathin Inas Monolayer
Hole Spin Relaxation
Dp Mechanism
Semiconductor Quantum Dots
Wells
Gaas
Hole spin relaxation
DP mechanism
SEMICONDUCTOR QUANTUM DOTS
WELLS
GAAS