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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [54]
采集方式
OAI收割 [54]
内容类型
期刊论文 [50]
会议论文 [4]
发表日期
2011 [3]
2010 [1]
2009 [4]
2008 [7]
2007 [4]
2006 [4]
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学科主题
半导体物理 [54]
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Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:33/2
  |  
提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004
作者:
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
  |  
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Atomic Force Microscopy
Buffer Layers
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Germanium
Growth Temperature
High Resolution Transmission Electron Microscopy
Molecular Beam Epitaxy
Molecular Beams
Semiconducting Gallium
Semiconductor Device Structures
Semiconductor Quantum Wells
2-5m InAs/GaSb superlattices infrared photodetector
期刊论文
OAI收割
hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406
作者:
Xu, Yingqiang
;
Tang, Bao
;
Wang, Guowei
;
Ren, Zhengwei
;
Niu, Zhichuan
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Alignment
Atomic force microscopy
Atomic spectroscopy
Detectors
Epitaxial growth
Gallium alloys
Gallium arsenide
Indium arsenide
Infrared detectors
Molecular beam epitaxy
Molecular beams
Optoelectronic devices
Semiconducting gallium
Superlattices
Transmission electron microscopy
X ray diffraction
Alignment
Atomic Force Microscopy
Atomic Spectroscopy
Detectors
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Indium Arsenide
Infrared Detectors
Molecular Beam Epitaxy
Molecular Beams
Optoelectronic Devices
Semiconducting Gallium
Superlattices
Transmission Electron Microscopy
x Ray Diffraction
Ferromagnetic properties in Fe-doped ZnS thin films
期刊论文
OAI收割
optoelectronics and advanced materials-rapid communications, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 2010, 卷号: 4, 4, 期号: 12, 页码: 2072-2075, 2072-2075
作者:
Zhu F
;
Dong S
;
Yang GD
;
Zhu, F, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhufeng@semi.ac.cn
  |  
收藏
  |  
浏览/下载:38/1
  |  
提交时间:2011/07/06
Fe-doped ZnS
First principles calculation
Ferromagnetic properties
High Curie temperature
OPTICAL-PROPERTIES
SEMICONDUCTORS
Fe-doped Zns
First Principles Calculation
Ferromagnetic Properties
High Curie Temperature
Optical-properties
Semiconductors
Size dependence of biexciton binding energy in single InAs/GaAs quantum dots
期刊论文
OAI收割
chinese physics b, 2009, 卷号: 18, 期号: 6, 页码: 2258-2263
Don XM
;
Sun BQ
;
Huang SS
;
Ni HQ
;
Niu ZC
;
Yang FH
;
Jia R
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/03/08
biexcition binding energy
single quantum dots
exciton molecular model
Heitler-London method
Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates
期刊论文
OAI收割
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 5, 页码: art. no. 055310
作者:
Ye XL
;
Pan JQ
;
Liang S
收藏
  |  
浏览/下载:127/30
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
MULTIATOMIC STEPS
ISLANDS
GROWTH
FABRICATION
EPITAXY
Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: art. no. 262105
作者:
Zhang XW
;
Yin ZG
;
You JB
收藏
  |  
浏览/下载:99/13
  |  
提交时间:2010/03/08
atomic force microscopy
field emission
hydrogen
II-VI semiconductors
plasma materials processing
sputter deposition
wide band gap semiconductors
work function
zinc compounds
Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy
期刊论文
OAI收割
chinese physics letters, 2009, 卷号: 26, 期号: 4, 页码: art. no. 047802
作者:
Xu YQ
收藏
  |  
浏览/下载:205/51
  |  
提交时间:2010/03/08
INAS
Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films
期刊论文
OAI收割
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 16, 页码: art. no. 165004
Sun, LL
;
Yan, FW
;
Gao, HY
;
Zhang, HX
;
Zeng, YP
;
Wang, GH
;
Li, JM
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/03/08
P-TYPE GAN
SAPPHIRE
PROPERTY
Spectroscopy of long wavelength coupled quantum dots
期刊论文
OAI收割
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 17, 页码: art. no. 175102
Xiong, YH
;
Huang, SS
;
Ni, HQ
;
Dou, XM
;
Niu, ZC
收藏
  |  
浏览/下载:84/1
  |  
提交时间:2010/03/08
ELECTRON-SPIN
EMISSION
ISLANDS
GROWTH
STATES