机构

• 半导体研究所 [9]

采集方式

• OAI收割 [6]
• iSwitch采集 [3]

内容类型

• 期刊论文 [9]

发表日期

• 2013 [2]
• 2011 [2]
• 2005 [2]
• 2003 [2]
• 1998 [1]

学科主题

• 光电子学 [3]
• 半导体材料 [3]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文  OAI收割 solid-state electronics, 2013, 卷号: 83, 页码: 66-70 Wang, Lanxiang; Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia 收藏  |  浏览/下载：19/0  |  提交时间：2013/08/27 Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文  OAI收割 Solid-State Electronics, Solid-State Electronics, 2013, 2013, 卷号: 83, 83, 页码: 66–70, 66–70 作者:  Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo   |  收藏  |  浏览/下载：30/0  |  提交时间：2014/04/04 Synthesis and microwave absorbing properties of poly(3,4-ethylenedioxythiophene) (pedot) microspheres 期刊论文  iSwitch采集 Polymers for advanced technologies, 2011, 卷号: 22, 期号: 5, 页码: 532-537 作者:  Ni, Xunwei;  Hu, Xiujie;  Zhou, Shuyun;  Sun, Chenghua;  Bai, Xiaoxia 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Conducting polymers  Hollow microspheres  Microwave absorbing properties  Poly(3,4-ethylenedioxythiophene) (pedot)   Synthesis and microwave absorbing properties of poly(3,4-ethylenedioxythiophene) (PEDOT) microspheres 期刊论文  OAI收割 polymers for advanced technologies, 2011, 卷号: 22, 期号: 5, 页码: 532-537 Ni XW; Hu XJ; Zhou SY; Sun CH; Bai XX; Chen P 收藏  |  浏览/下载：59/2  |  提交时间：2011/07/05 conducting polymers  hollow microspheres  microwave absorbing properties  poly(3,4-ethylenedioxythiophene) (PEDOT)  POLY 3,4-ETHYLENEDIOXYTHIOPHENE  CORE-SHELL  HOLLOW  POLYMERIZATION  POLYANILINE  SURFACE  ELECTROCHEMISTRY  POLYTHIOPHENES  NANOPARTICLES  DISPERSION   An improvement on si-etching tetramethyl ammonium hydroxide solution 期刊论文  iSwitch采集 Chinese journal of chemical engineering, 2005, 卷号: 13, 期号: 1, 页码: 48-50 作者:  Yang, D;  Yu, JZ;  Chen, SW;  Fan, ZC;  Li, YT 收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12 Silicon  Silicon dioxide  Tetramethyl ammonium hydroxide  Etching rate   An improvement on Si-etching tetramethyl ammonium hydroxide solution 期刊论文  OAI收割 chinese journal of chemical engineering, 2005, 卷号: 13, 期号: 1, 页码: 48-50 作者:  Li YT 收藏  |  浏览/下载：22/0  |  提交时间：2010/03/17 silicon   Electronic properties of sulfur passivated undoped-n(+) type gaas surface studied by photoreflectance 期刊论文  iSwitch采集 Applied surface science, 2003, 卷号: 218, 期号: 1-4, 页码: 210-214 作者:  Jin, P;  Pan, SH;  Li, YG;  Zhang, CZ;  Wang, ZG 收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12 Sulfur passivation  Franz-keldysh oscillations  Undoped-n(+) type gaas  Complex fourier transformation   Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance 期刊论文  OAI收割 applied surface science, 2003, 卷号: 218, 期号: 1-4, 页码: 210-214 作者:  Jin P 收藏  |  浏览/下载：458/3  |  提交时间：2010/08/12 sulfur passivation  Franz-Keldysh oscillations  undoped-n(+) type GaAs  complex Fourier transformation  FRANZ-KELDYSH OSCILLATIONS  GAAS(001) SURFACES  GAAS(100)  PHOTOEMISSION  SPECTROSCOPY  ENHANCEMENT   The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 1998, 卷号: 193, 期号: 1-2, 页码: 23-27 Liu XL; Lu DC; Wang LS; Wang XH; Wang D; Lin LY 收藏  |  浏览/下载：32/0  |  提交时间：2010/08/12 MOVPE  GaN buffer layer  growth rate  growth parameters  TRIMETHYLGALLIUM  MECHANISMS  QUALITY  AMMONIA  DIODES  MOCVD  GAAS  THERMAL-DECOMPOSITION