机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [10]
• 会议论文 [1]

发表日期

• 2010 [1]
• 2009 [1]
• 2002 [1]
• 2001 [3]
• 1999 [1]
• 1998 [3]
• 更多

学科主题

• 半导体物理 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 First-principles study of ground-state properties and high pressure behavior of ThO2 期刊论文  OAI收割 journal of nuclear materials, JOURNAL OF NUCLEAR MATERIALS, 2010, 2010, 卷号: 399, 399, 期号: 2-3, 页码: 181-188, 181-188 作者:  Wang BT (Wang Bao-Tian);  Shi HL (Shi Hongliang);  Li WD (Li Wei-Dong);  Zhang P (Zhang Ping);  Zhang, P, Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China. 电子邮箱地址: zhang_ping@iapcm.ac.cn   |  收藏  |  浏览/下载：34/0  |  提交时间：2010/06/18 ELASTIC PROPERTIES  Elastic Properties  Actinide Dioxides  Thorium-dioxide  Single-crystal  Stability  ACTINIDE DIOXIDES  THORIUM-DIOXIDE  SINGLE-CRYSTAL  STABILITY   Magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO: First-principles calculations 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 023910 Shi HL; Zhang P; Li SS; Xia JB 收藏  |  浏览/下载：106/25  |  提交时间：2010/03/08 FERROMAGNETIC SEMICONDUCTOR  BAND-STRUCTURE  STABILIZATION  INJECTION   Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts 期刊论文  OAI收割 journal of physics d-applied physics, 2002, 卷号: 35, 期号: 20, 页码: 2648-2651 作者:  Zhang SM;  Zhao DG 收藏  |  浏览/下载：59/0  |  提交时间：2010/08/12 RESISTANCE OHMIC CONTACTS  FIELD-EFFECT TRANSISTOR  SINGLE-CRYSTAL GAN  MICROWAVE PERFORMANCE  STABILITY  BARRIER  DIODES   Surface roughness and high density of cubic twins and hexagonal inclusions in cubic GaN epilayers 期刊论文  OAI收割 science in china series a-mathematics physics astronomy, 2001, 卷号: 44, 期号: 6, 页码: 796-800 Qu B; Li SF; Hu GX; Zheng XH; Wang YT; Lin SM; Yang H; Liang JW 收藏  |  浏览/下载：88/3  |  提交时间：2010/08/12 GaN  polarity  surface roughness  FILMS  STABILITY  GROWTH   Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers 期刊论文  OAI收割 science in china series a-mathematics physics astronomy, 2001, 卷号: 44, 期号: 4, 页码: 497-503 Qu B; Zheng XH; Wang YT; Feng ZH; Han JY; Liu S; Lin SM; Yang H; Liang JW 收藏  |  浏览/下载：106/6  |  提交时间：2010/08/12 four-circle diffraction  GaN  phase content  MOLECULAR-BEAM EPITAXY  GAN FILMS  GROWTH  STABILITY  RATIO   Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation 期刊论文  OAI收割 applied physics letters, 2001, 卷号: 78, 期号: 17, 页码: 2509-2511 Sheng SR; Liao XB; Kong GL 收藏  |  浏览/下载：103/17  |  提交时间：2010/08/12 CONSTANT PHOTOCURRENT METHOD  A-SI-H  ABSORPTION  FILMS  SPECTROSCOPY  DEPOSITION  STABILITY  DILUTION   A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well 期刊论文  OAI收割 journal of applied physics, 1999, 卷号: 86, 期号: 3, 页码: 1456-1459 Kong MY; Wang XL; Pan D; Zeng YP; Wang J; Ge WK 收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12 OPTICAL-PROPERTIES  CARRIER RELAXATION  THERMAL-ACTIVATION  LOCALIZED EXCITONS  SUPERLATTICES  MULTILAYERS  STABILITY  ISLANDS  GROWTH   Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser 期刊论文  OAI收割 japanese journal of applied physics part 1-regular papers short notes & review papers, 1998, 卷号: 37, 期号: 6b, 页码: 3673-3675 Pan Z; Zhang Y; Du Y; Wu RH 收藏  |  浏览/下载：31/0  |  提交时间：2010/08/12 VCSEL  selective oxidation  stability  MICROSTRUCTURE  WET OXIDATION   Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser 会议论文  OAI收割 6th microoptics conference / 14th topical meeting on gradient-index optical systems (moc/grin 97), tokyo, japan, oct 07-09, 1997 Pan Z; Zhang Y; Du Y; Wu RH 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 VCSEL  selective oxidation  stability  WET OXIDATION  MICROSTRUCTURE   Structural study of YSi1.7 layers formed by channeled ion beam synthesis 期刊论文  OAI收割 journal of vacuum science & technology b, 1998, 卷号: 16, 期号: 4, 页码: 1901-1906 Wu MF; Yao SD; Vantomme A; Hogg S; Pattyn H; Langouche G; Yang QQ; Wang QM 收藏  |  浏览/下载：26/0  |  提交时间：2010/08/12 YTTRIUM-SILICIDE LAYERS  ERSI1.7 LAYERS  COSI2 LAYERS  THIN-FILMS  IMPLANTATION  SI  DIFFRACTION  STABILITY  KINETICS  SI(111)