机构

• 半导体研究所 [15]

采集方式

• OAI收割 [15]

内容类型

• 期刊论文 [15]

发表日期

• 2016 [2]
• 2014 [1]
• 2011 [1]
• 2010 [1]
• 2009 [1]
• 2008 [3]
• 更多

学科主题

• 半导体器件 [15]

筛选

浏览/检索结果: 共15条，第1-10条 帮助 限定条件 学科主题：半导体器件     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition 期刊论文  OAI收割 aip advances, 2016, 卷号: 6, 期号: 6, 页码: 065301 Shuo Zhang; Ping Ma; Boting Liu; Dongxue Wu; Yuliang Huang; Junxi Wang; Jinmin Li 收藏  |  浏览/下载：13/0  |  提交时间：2017/03/16 Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition 期刊论文  OAI收割 chinese physics letters, 2016, 卷号: 33, 期号: 6, 页码: 068101 Peng Ren; Gang Han; Bing-Lei Fu; Bin Xue; Ning Zhang; Zhe Liu; Li-Xia Zhao; Jun-Xi Wang; Jin-Min Li 收藏  |  浏览/下载：21/0  |  提交时间：2017/03/16 Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst 期刊论文  OAI收割 chinese physics b, CHINESE PHYSICS B, 2014, 2014, 卷号: 23, 23, 期号: 9, 页码: 096802, 096802 作者:  Zhao, Y;  Wang, G;  Yang, HC;  An, TL;  Chen, MJ   |  收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25 Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 8, 页码: 83920, 83920 作者:  Gupta, S;  Zaidi, T;  Melton, A;  Malguth, E;  Yu, HB   |  收藏  |  浏览/下载：18/0  |  提交时间：2012/02/06 FERROMAGNETIC PROPERTIES  SEMICONDUCTORS  GAN  GAGDN  Ferromagnetic Properties  Semiconductors  Gan  Gagdn   High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers 期刊论文  OAI收割 chinese physics letters, 2010, 卷号: 27, 期号: 11, 页码: art. no. 114201 Wang Y (Wang Yang); Qiu YP (Qiu Ying-Ping); Pan JQ (Pan Jiao-Qing); Zhao LJ (Zhao Ling-Juan); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei) 收藏  |  浏览/下载：23/0  |  提交时间：2010/12/05 AUGER RECOMBINATION  THRESHOLD CURRENT  DEPENDENCE  DEVICE   Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell 期刊论文  OAI收割 science in china series e-technological sciences, 2009, 卷号: 52, 期号: 5, 页码: 1176-1180 作者:  Zhang H;  Yin ZG;  Zhang XW 收藏  |  浏览/下载：200/42  |  提交时间：2010/03/08 quantum efficiency  temperature coefficient  solar cell   Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition 期刊论文  OAI收割 半导体学报, 2008, 卷号: 29, 期号: 1, 页码: 12-16 Shi Huiling; Ma Xiaoyu; Hu Like; Chong Feng 收藏  |  浏览/下载：126/23  |  提交时间：2010/11/23 Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 266-269 Wang, XH; Wang, XL; Feng, C; Xiao, HL; Yang, CB; Wang, JX; Wang, BZ; Ran, JX; Wang, CM 收藏  |  浏览/下载：74/8  |  提交时间：2010/03/08 GAS SENSORS  HEMT STRUCTURES  MOBILITY  TRANSISTORS  TEMPERATURE  SURFACES  PT/GAN  GROWTH  PD/GAN  MOCVD   Passively mode-locked YVO4/Nd : YVO4 composite crystal laser with a semiconductor saturable absorber as a high reflector 期刊论文  OAI收割 laser physics letters, 2008, 卷号: 5, 期号: 6, 页码: 421-424 Zhuo, Z; Li, T; Wang, YG 收藏  |  浏览/下载：48/9  |  提交时间：2010/03/08 YVO4/Nd : YVO4 composite crystal  diode pumped lasers  mode locked lasers  thermal effects   High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing 期刊论文  OAI收割 chinese optics letters, 2006, 卷号: 4, 期号: 1, 页码: 27-29 作者:  Xin Wei;  Jun Wang;  Jun Wang 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/23