机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [8]
• 会议论文 [3]

发表日期

• 2016 [1]
• 2015 [2]
• 2013 [2]
• 2011 [1]
• 2008 [2]
• 2000 [1]
• 更多

学科主题

• 光电子学 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Influence of hydrogen on the properties of titanium doped hydrogenated amorphous silicon prepared by sputtering 期刊论文  OAI收割 vacuum, 2016, 卷号: 125, 页码: 93-97 Tianwei Zhou; Yuhua Zuo; Kai Qiu; Jun Zheng; Qiming Wang 收藏  |  浏览/下载：11/0  |  提交时间：2017/03/10 Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films 期刊论文  OAI收割 journal of vacuum science & technology a, 2015, 卷号: 33, 期号: 2, 页码: 021505 Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Zongshun Liu; Lingcong Le; Xiaoguang He; Xiaojing Li 收藏  |  浏览/下载：22/0  |  提交时间：2016/03/23 Influence of hydrogen on the properties of titanium doped hydrogenated amorphous silicon prepared by sputtering 期刊论文  OAI收割 vacuum, Vacuum, 2015, 2015, 卷号: 125, 125, 页码: 93-97, 93-97 作者:  Tianwei Zhou;  Yuhua Zuo;  Kai Qiu;  Jun Zheng;  Qiming Wang   |  收藏  |  浏览/下载：11/0  |  提交时间：2016/03/22 Reduced defect density in microcrystalline silicon by hydrogen plasma treatment 期刊论文  OAI收割 journal of semiconductors, 2013, 卷号: 34, 期号: 10, 页码: 103006 Li Jingyan; Zeng Xiangbo; Li Hao; Xie Xiaobing; Yang Ping; Xiao Haibo; Zhang Xiaodong 收藏  |  浏览/下载：11/0  |  提交时间：2014/05/08 Mechanism of the improvement in microcrystalline silicon solar cells by hydrogen plasma treatment 期刊论文  OAI收割 advanced materials research, 2013, 卷号: 773, 页码: 118-123 Jing Yan Li, Xiang Bo Zeng, Hao Li, Xiao Bing Xie, Ping Yang, Hai Bo Xiao, Xiao Dong Zhang, Qi Ming Wang 收藏  |  浏览/下载：12/0  |  提交时间：2014/05/08 Metal electrode influence on the wet selective etching of GaAs/AlGaAs 期刊论文  OAI收割 journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 4, 页码: 41208 Wang J; Han Q; Yang XH; Wang XP; Ni HQ; He JF 收藏  |  浏览/下载：12/0  |  提交时间：2012/02/06 HYDROGEN-PEROXIDE SOLUTIONS  III-V SEMICONDUCTORS  PSEUDOMORPHIC MODFETS  GAAS  FABRICATION  TRANSISTOR  ALGAAS   Optical and Electrical Properties of GaN.Mg Grown by MOCVD 期刊论文  OAI收割 半导体学报, 2008, 卷号: 29, 期号: 1, 页码: 29-32 作者:  Zhang Shuming 收藏  |  浏览/下载：138/36  |  提交时间：2010/11/23 Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文  OAI收割 conference on advanced materials and devices for sensing and imaging iii, beijing, peoples r china, nov 12-14, 2007 Wang, XH; Wan, XL; Xiao, HL; Feng, C; Way, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09 hydrogen sensor  AlGaN/GaN heterostructure  Schottky diode   The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文  OAI收割 journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL 收藏  |  浏览/下载：80/0  |  提交时间：2010/08/12 atomic hydrogen-assisted molecular beam epitaxy  deep level transient spectroscopy  deep level defects  DISLOCATION DENSITY  IRRADIATION   Dynamics of formation of defects in annealed InP 会议论文  OAI收割 conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998 Han YJ; Liu XL; Jiao JH; Lin LY 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 defects formation  hydrogen related defects  semi-insulating  InP