机构

• 近代物理研究所 [26]

采集方式

• OAI收割 [26]

内容类型

• 期刊论文 [20]
• 会议论文 [5]
• 学位论文 [1]

发表日期

• 2021 [1]
• 2020 [3]
• 2019 [4]
• 2017 [2]
• 2016 [2]
• 2015 [1]
• 更多

学科主题

筛选

浏览/检索结果: 共26条，第1-10条 帮助 限定条件 专题：近代物理研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 The effect of cavities on recrystallization growth of high-fluence He implanted-SiC 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2021, 卷号: 509, 页码: 68-72 作者:  Zhang, Tongmin;  He, Xiaoxun;  Chen, Limin;  Li, Jun;  Liao, Qing   |  收藏  |  浏览/下载：81/0  |  提交时间：2022/01/07 He implantation  Recrystallization  Microstructure  6H-SiC   Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 degrees C* 期刊论文  OAI收割 CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 7, 页码: 7 作者:  Liao, Qing;  Li, Bingsheng;  Kang, Long;  Li, Xiaogang   |  收藏  |  浏览/下载：14/0  |  提交时间：2021/12/15 He implantation  cavities  extended defects  transmission electron microscopy  recrystallization   Characterization of swift heavy ion tracks in MoS(2)by transmission electron microscopy* 期刊论文  OAI收割 CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 10, 页码: 5 作者:  Xu, Li-Jun;  Zhai, Peng-Fei;  Zhang, Sheng-Xia;  Zeng, Jian;  Hu, Pei-Pei   |  收藏  |  浏览/下载：12/0  |  提交时间：2021/12/13 ion track  MoS2  transmission electron microscopy (TEM)  recrystallization   Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 卷号: 478, 页码: 5-10 作者:  Huang, Mingmin;  Yang, Zhimei;  Wang, Shaomin;  Liu, Jiyuan;  Gong, Min   |  收藏  |  浏览/下载：32/0  |  提交时间：2021/12/15 Schottky barrier diodes  Raman spectroscopy  Recrystallization effect  Swift heavy ion  SiC   Fine structure of swift heavy ion track in rutile TiO2 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 457, 页码: 72-79 作者:  Hu, Peipei;  Zeng, Jian;  Zhang, Shengxia;  Sun, Youmei;  Liu, Jie   |  收藏  |  浏览/下载：82/0  |  提交时间：2019/11/10 Ion track  TEM  Hillock  Recrystallization  Thermal spike   Damage and recovery behavior of 4H-SiC implanted with He ions 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 449, 页码: 54-57 作者:  Zhang, Chonghong;  Yang, Yitao;  Su, Changhao;  Ding, Zhaonan;  Song, Yin   |  收藏  |  浏览/下载：98/0  |  提交时间：2019/11/10 4H-SiC  He ions implantation  Nanoindentation  Raman  Graphite  Thermal annealing   Study on the phase separation behavior of (U,Nd)(3)O-8 powder by high temperature oxidation 期刊论文  OAI收割 JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, 2019, 卷号: 320, 期号: 1, 页码: 235-243 作者:  Qin, Zhi;  Tian, Wei;  Wang, Jie-Ru;  Tan, Cun-Min;  Fan, Fang-Li   |  收藏  |  浏览/下载：38/0  |  提交时间：2019/11/10 Spent nuclear fuel  High temperature oxidation  Lanthanides  Phase separation   Recrystallization Phase in He-Implanted 6H-SiC 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2017, 卷号: 34, 页码: 4 作者:  Lin, Hua;  Zhang, Li;  Liu, Yu-Zhu;  Li, Bing-Sheng   |  收藏  |  浏览/下载：8/0  |  提交时间：2018/05/31 High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2017, 卷号: 34, 页码: 4 作者:  Li, Bing-Sheng;  Liu, Yu-Zhu;  Zhang, Li   |  收藏  |  浏览/下载：11/0  |  提交时间：2018/05/31