机构

• 半导体研究所 [40]

采集方式

• OAI收割 [40]

内容类型

• 会议论文 [40]

发表日期

• 2010 [1]
• 2007 [1]
• 2006 [13]
• 2004 [4]
• 2003 [1]
• 2002 [6]
• 更多

学科主题

• 半导体材料 [40]

筛选

浏览/检索结果: 共40条，第1-10条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS 会议论文  OAI收割 34th ieee photovoltaic specialists conference, philadelphia, pa, 2009 Peng WB (Peng Wenbo); Zeng XB (Zeng Xiangbo); Liu SY (Liu Shiyong); Xiao HB (Xiao Haibo); Kong GL (Kong Guanglin); Yu YD (Yu Yude); Liao XB (Liao Xianbo) 收藏  |  浏览/下载：252/64  |  提交时间：2010/08/16 Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文  OAI收割 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Zhao, YM (Zhao, Y. M.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：161/28  |  提交时间：2010/03/29 micro-raman  4H-SiC  defects  3C-inclusions  triangle-shaped inclusion  EPITAXIAL LAYERS  SILICON-CARBIDE   Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文  OAI收割 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Liu, Z; Wang, JX; Wang, XL; Hu, GX; Guo, LC; Liu, HX; Li, JP; Li, JM; Zeng, YP 收藏  |  浏览/下载：222/40  |  提交时间：2010/03/29 surface morphology   Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文  OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Wang, CM; Wang, XL; Hu, GX; Wang, JX; Li, JP 收藏  |  浏览/下载：117/30  |  提交时间：2010/03/29 HIGH BREAKDOWN VOLTAGE  MOBILITY TRANSISTORS  HETEROSTRUCTURES  SAPPHIRE  GANHEMTS   Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 会议论文  OAI收割 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Yang, ZX 收藏  |  浏览/下载：202/19  |  提交时间：2010/03/29 indium phosphide   1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots 会议论文  OAI收割 4th international conference on silicon epitaxy and heterostructures, awaji isl, japan, may 23-26, 2005 Yu, J; Kasper, E; Oehme, M 收藏  |  浏览/下载：145/20  |  提交时间：2010/03/29 SiGe   Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文  OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Fang, CB; Wang, XL; Wang, JX; Liu, C; Wang, CM; Hu, GX; Li, JP; Li, CJ 收藏  |  浏览/下载：114/18  |  提交时间：2010/03/29 THERMALLY STIMULATED CURRENT  GALLIUM NITRIDE  DEFECTS   Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation 会议论文  OAI收割 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Islam MR; Chen NF; Yamada M 收藏  |  浏览/下载：125/8  |  提交时间：2010/03/29 Raman scattering   Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 会议论文  OAI收割 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 作者:  Xu B 收藏  |  浏览/下载：134/15  |  提交时间：2010/03/29 Monte Carlo simulation   Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD 会议论文  OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Wang, XL; Wang, CM; Hu, GX; Wang, JX; Li, JP 收藏  |  浏览/下载：154/51  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY  2-DIMENSIONAL ELECTRON-GAS  BULK GAN  OPTIMIZATION  LAYERS  HEMTS