机构

• 半导体研究所 [25]

采集方式

• OAI收割 [25]

内容类型

• 会议论文 [25]

发表日期

• 2008 [1]
• 2006 [5]
• 2004 [4]
• 2003 [1]
• 2002 [1]
• 2001 [4]
• 更多

学科主题

• 半导体材料 [25]

筛选

浏览/检索结果: 共25条，第1-10条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文  OAI收割 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Liu, Z; Wang, JX; Wang, XL; Hu, GX; Guo, LC; Liu, HX; Li, JP; Li, JM; Zeng, YP 收藏  |  浏览/下载：222/40  |  提交时间：2010/03/29 surface morphology   Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文  OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Wang, CM; Wang, XL; Hu, GX; Wang, JX; Li, JP 收藏  |  浏览/下载：118/30  |  提交时间：2010/03/29 HIGH BREAKDOWN VOLTAGE  MOBILITY TRANSISTORS  HETEROSTRUCTURES  SAPPHIRE  GANHEMTS   Synthesis of GaN nanorods with vertebra-like morphology 会议论文  OAI收割 ieee international conference of nano/micro engineered and molecular systems, zhuhai, peoples r china, jan 18-21, 2006 Gao, HY (Gao, Haiyong); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：112/30  |  提交时间：2010/03/29 GaN nanorods  Ga2O3/ZnO films  nitritding  morphology  CHEMICAL-VAPOR-DEPOSITION  FILMS   Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation 会议论文  OAI收割 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Islam MR; Chen NF; Yamada M 收藏  |  浏览/下载：126/8  |  提交时间：2010/03/29 Raman scattering   Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD 会议论文  OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Wang, XL; Wang, CM; Hu, GX; Wang, JX; Li, JP 收藏  |  浏览/下载：154/51  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY  2-DIMENSIONAL ELECTRON-GAS  BULK GAN  OPTIMIZATION  LAYERS  HEMTS   Raman scattering study on diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Islam MR; Chen NF; Yamada M 收藏  |  浏览/下载：130/33  |  提交时间：2010/03/29 Defects in GaSb studied by coincidence Doppler broadening measurements 会议论文  OAI收割 13th international conference on positron annihilation (icpa-13), kyoto, japan, sep 07-12, 2003 Hu WG; Wang Z; Dai YQ; Wang SJ; Zhao YW 收藏  |  浏览/下载：25/1  |  提交时间：2010/10/29 coincidence Doppler broadening  defects  GaSb  positron annihilation   Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Sun, J; Hu, LZ; Sun, YC; Wang, ZY 收藏  |  浏览/下载：59/0  |  提交时间：2010/03/29 GROWTH   Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文  OAI收割 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 作者:  Han PD 收藏  |  浏览/下载：83/1  |  提交时间：2010/10/29 metalorganic chemical vapor deposition  semiconducting III-V materials  DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES  CARRIER CONFINEMENT  EFFECT TRANSISTORS  PHOTOLUMINESCENCE  MOBILITY  HETEROJUNCTION  INTERFACE  HFETS