机构

• 半导体研究所 [4]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2005 [1]
• 2002 [2]
• 1997 [1]

学科主题

• 半导体材料 [4]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Silica and alumina thin films grown by liquid phase deposition 期刊论文  OAI收割 pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1725-1728 Sun, J; Hu, LZ; Wang, ZY; Du, GT 收藏  |  浏览/下载：25/0  |  提交时间：2010/03/17 silica  alumina  liquid phase deposition  semiconductors  ELECTRICAL CHARACTERISTICS  DIOXIDE FILMS  OXIDE-FILMS   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文  OAI收割 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 521-524 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：82/19  |  提交时间：2010/08/12 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Optical and structural properties of anodized AlxGa1-xAs layers 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 1997, 卷号: 44, 期号: 0, 页码: 121-124 Xiang XB; Liao XB; Chang SL; Du WH 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/17 anodized AlxGa1-xAs films  optical reflectance  x-ray photoemission  auger electron spectroscopy