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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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半导体研究所 [70]
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OAI收割 [70]
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期刊论文 [61]
会议论文 [9]
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2011 [5]
2010 [5]
2009 [5]
2008 [3]
2007 [4]
2006 [2]
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半导体材料 [70]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:65/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Fabrication of a novel lumped electro-absorption modulator with a lower RC-time constant
期刊论文
OAI收割
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 105002
Qiu, Yingping
;
Wang, Yang
;
Shao, Yongbo
;
Zhou, Daibing
;
Liang, Song
;
Zhao, Lingjuan
;
Wang, Wei
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2012/06/14
Absorption
Capacitance
Fabrication
Light extinction
Semiconducting indium gallium arsenide
Waveguides
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing
期刊论文
OAI收割
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:
Jin P
;
Ye XL
;
Zhou XL
收藏
  |  
浏览/下载:49/4
  |  
提交时间:2011/07/05
SPECTROSCOPY
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
OAI收割
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
OAI收割
journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 314, 314, 期号: 1, 页码: 141-145, 141-145
作者:
Wei TB
;
Yang JK
;
Hu Q
;
Duan RF
;
Huo ZQ
  |  
收藏
  |  
浏览/下载:80/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
Cl
Pl
Stacking Fault
Hvpe
Gan
Nonpolar
Chemical-vapor-deposition
Acceptor Pair Emission
Phase Epitaxy
Grown Gan
Semiconductors
Sapphire
Films
Nitride
Magnetic properties of ZnO-doped cobalt ferrite
会议论文
OAI收割
4th asian meeting on electroceramics (amec-4), hangzhou, peoples r china, jun 27-30, 2005
Zhou, JP
;
Shi, Z
;
He, HC
;
Nan, CW
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/03/09
CoFe2O4
Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043702
Li GD (Li Guodong)
;
Yin H (Yin Hong)
;
Zhu QS (Zhu Qinsheng)
;
Sakaki H (Sakaki Hiroyuki)
;
Jiang C (Jiang Chao)
收藏
  |  
浏览/下载:204/41
  |  
提交时间:2010/10/11
PHOTOLUMINESCENCE
HETEROJUNCTIONS
SPECTROSCOPY
SYSTEMS
PHYSICS
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks
期刊论文
OAI收割
applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908
Zheng XH (Zheng X. H.)
;
Huang AP (Huang A. P.)
;
Xiao ZS (Xiao Z. S.)
;
Yang ZC (Yang Z. C.)
;
Wang M (Wang M.)
;
Zhang XW (Zhang X. W.)
;
Wang WW (Wang W. W.)
;
Chu PK (Chu Paul K.)
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/14
OXYGEN
GATE
DIFFUSION
FILMS
Blue-shift photoluminescence from porous InAlAs
期刊论文
OAI收割
semiconductor science and technology, 2010, 卷号: 25, 期号: 11, 页码: art. no. 115006
Jiang YC (Jiang Y. C.)
;
Liu FQ (Liu F. Q.)
;
Wang LJ (Wang L. J.)
;
Yin W (Yin W.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/12/28
MACROPOROUS SILICON
PORE FORMATION
GAP
INP
AL0.48IN0.52AS
NANOSTRUCTURES
MORPHOLOGY
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
期刊论文
OAI收割
journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Zhao J (Zhao Jie)
;
Zeng YP (Zeng Yiping)
;
Liu C (Liu Chao)
;
Li YB (Li Yanbo)
收藏
  |  
浏览/下载:148/33
  |  
提交时间:2010/06/04
Reflection high-energy electron diffraction
Atomic force microscopy
Molecular beam epitaxy
Zinc compounds
Semiconducting II-VI materials