机构

• 半导体研究所 [16]

采集方式

• OAI收割 [16]

内容类型

• 期刊论文 [14]
• 会议论文 [2]

发表日期

• 2012 [3]
• 2011 [1]
• 2010 [4]
• 2009 [1]
• 2008 [3]
• 2007 [1]
• 更多

学科主题

• 光电子学 [16]

筛选

浏览/检索结果: 共16条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 25, 页码: 252110 Le, L.C; Zhao, D.G; Jiang, D.S; Zhang, S.M; Yang, H; Li, L; Wu, L.L; Chen, P; Liu, Z.S; Li, Z.C; Fan, Y.M; Zhu, J.J; Wang, H 收藏  |  浏览/下载：16/0  |  提交时间：2013/04/19 Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 25, 页码: 252110 Le, L.C; Zhao, D.G; Jiang, D.S; Zhang, S.M; Yang, H; Li, L; Wu, L.L; Chen, P; Liu, Z.S; Li, Z.C; Fan, Y.M; Zhu, J.J; Wang, H 收藏  |  浏览/下载：20/0  |  提交时间：2013/04/19 Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2012, 2012, 卷号: 101, 101, 期号: 25, 页码: 252110, 252110 作者:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.)   |  收藏  |  浏览/下载：17/0  |  提交时间：2013/03/20 Squeeze effect and coherent coupling behaviour in photonic crystal vertical-cavity surface-emitting lasers 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 11, 页码: article no.115104 作者:  Jiang B 收藏  |  浏览/下载：60/6  |  提交时间：2011/07/06 SINGLE-TRANSVERSE-MODE  POWER  POLARIZATION  OXIDATION   Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307 作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ 收藏  |  浏览/下载：107/3  |  提交时间：2010/04/05 GaN  light emitting diode  surface treatment  leakage current  THREADING DISLOCATION DENSITIES  LAYERS  NI/AU  LEDS   Ultracompact triplexer by coupling and decoupling of multiple photonic crystal waveguides 期刊论文  OAI收割 journal of optics, 2010, 卷号: 12, 期号: 6, 页码: art. no. 065502 He LJ (He Lingjuan); Xu XM (Xu Xuming); Liu NH (Liu Nianhua); Yu TB (Yu Tianbao); Fang LG (Fang Liguang) 收藏  |  浏览/下载：54/0  |  提交时间：2010/08/17 photonic crystal waveguides  self-imaging effect  triplexer  decoupling   Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文  OAI收割 physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672 Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.) 收藏  |  浏览/下载：35/0  |  提交时间：2010/12/12 InGaN  Dislocation  Metalorganic chemical vapor deposition  High resolution X-ray diffraction  Cathodoluminescence  MISFIT DISLOCATIONS  QUANTUM-WELLS  BAND-GAP  EPILAYERS  GENERATION  ALLOYS  INN   The characteristic of the stero-coupling high-Q photonic crystal slab cavity 期刊论文  OAI收割 acta physica sinica, 2010, 卷号: 59, 期号: 12, 页码: 8548-8553 作者:  Jiang B 收藏  |  浏览/下载：82/7  |  提交时间：2011/07/06 double layers photonic crystal slabs cavity  dipole mode  quality factor  Pade approximation  RESONANT FREQUENCIES  PADE-APPROXIMATION  QUALITY FACTORS  WAVE-GUIDES  COMPUTATION  NANOCAVITY  EMISSION  DEFECT   Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation 期刊论文  OAI收割 nanoscale research letters, 2009, 卷号: 4, 期号: 7, 页码: 753-757 作者:  Duan RF;  Wei TB 收藏  |  浏览/下载：96/0  |  提交时间：2010/03/08 GaN  Nonpolar  HVPE  Nanoindentation  Cathodoluminescence  Raman mapping   Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD 期刊论文  OAI收割 半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1242-1245 作者:  Zhao Degang;  Wang Yutian;  Jiang Desheng;  Duan Ruifei;  Ma Zhifang 收藏  |  浏览/下载：22/0  |  提交时间：2010/11/23