机构

• 半导体研究所 [23]

采集方式

• OAI收割 [23]

内容类型

• 期刊论文 [22]
• 会议论文 [1]

发表日期

• 2011 [2]
• 2010 [3]
• 2009 [3]
• 2005 [4]
• 2004 [1]
• 2003 [2]
• 更多

学科主题

• 半导体材料 [23]

筛选

浏览/检索结果: 共23条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010 作者:  Yang T;  Yang XG;  Wang KF 收藏  |   Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101 Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X 收藏  |   Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate 期刊论文  OAI收割 ieee electron device letters, 2010, 卷号: 31, 期号: 10, 页码: 1101-1103 Yang ZC (Yang Z. C.); Huang AP (Huang A. P.); Zheng XH (Zheng X. H.); Xiao ZS (Xiao Z. S.); Liu XY (Liu X. Y.); Zhang XW (Zhang X. W.); Chu PK (Chu Paul K.); Wang WW (Wang W. W.) 收藏  |   Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文  OAI收割 journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.) 收藏  |   Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells 期刊论文  OAI收割 science china-technological sciences, 2010, 卷号: 53, 期号: 9, 页码: 2569-2574 Zhang H (Zhang Han); Chen NF (Chen NuoFu); Wang Y (Wang Yu); Zhang XW (Zhang XingWang); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Wang YS (Wang YanSuo); Huang TM (Huang TianMao); Bai YM (Bai YiMing); Fu Z (Fu Zhen) 收藏  |   Dislocation core effect scattering in a quasitriangle potential well 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102 作者:  Wei HY 收藏  |   Raman scattering study on Ga1-xMnxAs prepared by Mn ions implantation, deposition and post-annealing 期刊论文  OAI收割 crystal research and technology, 2009, 卷号: 44, 期号: 2, 页码: 215-220 Islam MR; Chen NF; Yamada M 收藏  |   Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301 作者:  Jin P;  Wei HY;  Song HP 收藏  |   Quasi-continuous-wave operation of AlGaAs/GaAs quantum cascade lasers 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2005, 卷号: 30, 期号: 1-2, 页码: 21-24 Liu, JQ; Liu, FQ; Lu, XZ; Guo, Y; Wang, ZG 收藏  |   The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer 期刊论文  OAI收割 pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1791-1794 Shi, GX; Xu, B; Jin, P; Ye, XL; Cui, CX; Zhang, CL; Wu, J; Wang, ZG 收藏  |