机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [14]

发表日期

• 2011 [1]
• 2009 [1]
• 2008 [1]
• 2007 [1]
• 2006 [2]
• 2003 [2]
• 更多

学科主题

• 半导体物理 [14]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering 期刊论文  OAI收割 nano letters, NANO LETTERS, 2011, 2011, 卷号: 11, 11, 期号: 7, 页码: 2584-2589, 2584-2589 作者:  Chen L;  Yang X;  Yang FH;  Zhao JH;  Misuraca J   |  收藏  |  浏览/下载：90/0  |  提交时间：2012/01/06 MANIPULATION  GAAS  Manipulation  Gaas   Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者:  Qian X 收藏  |  浏览/下载：79/7  |  提交时间：2010/03/08 aluminium compounds  carrier lifetime  gallium arsenide  high-frequency effects  III-V semiconductors  optical Kerr effect  semiconductor heterojunctions  spin dynamics  two-dimensional electron gas   Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1045-1048 Zhang, ML; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Hu, GX 收藏  |  浏览/下载：49/3  |  提交时间：2010/03/08 TRANSPORT  PROTON  HEMTS   Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers 期刊论文  OAI收割 acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4143-4147 Zhou WZ (Zhou Wen-Zheng); Lin T (Lin Tie); Shang LY (Shang Li-Yan); Huang ZM (Huang Zhi-Ming); Zhu B (Zhu Bo); Cui LJ (Cui Li-Jie); Gao HL (Gao Hong-Ling); Li DL (Li Dong-Lin); Guo SL (Guo Shao-Ling); Gui YS (Gui Yong-Sheng); Chu JH (Chu Jun-Hao) 收藏  |  浏览/下载：138/0  |  提交时间：2010/03/29 SdH oscillation   As-doped p-type ZnO films by sputtering and thermal diffusion process 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.043704 Wang P (Wang Peng); Chen NF (Chen Nuofu); Yin ZG (Yin Zhigang); Yang F (Yang Fei); Peng CT (Peng Changtao); Dai RX (Dai Ruixuan); Bai YM (Bai Yiming) 收藏  |  浏览/下载：36/0  |  提交时间：2010/04/11 RAY-PHOTOELECTRON-SPECTROSCOPY  INAS SURFACES  FABRICATION  DEPOSITION  LAYERS  OXIDE   Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well 期刊论文  OAI收割 acta physica sinica, 2006, 卷号: 55, 期号: 4, 页码: 2044-2048 Zhou WZ; Yao W; Zhu B; Qiu ZJ; Guo SL; Lin T; Cui LJ; Gui YS; Chu JH 收藏  |  浏览/下载：57/0  |  提交时间：2010/04/11 InAlAs/InGaAs single quantum well  SdH oscillation  two-dimensional electron gas  magneto-intersubband scattenng  ALLOY SCATTERING  HETEROJUNCTIONS  HEMTS  OSCILLATIONS  TRANSPORT   Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 期刊论文  OAI收割 microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 333-339 Wang QY; Wang JH; Deng HF; Lin LY 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 neutron irradiation  annealing  defects in silicon  SPECTRA   Electron transport properties of MM-HEMT with varied channel indium contents 期刊论文  OAI收割 acta physica sinica, 2003, 卷号: 52, 期号: 11, 页码: 2879-2882 Qiu ZJ; Jiang CP; Gui YS; Shu XZ; Guo SL; Chu JH; Cui LJ; Zeng YP; Zhu ZP; Wang BQ 收藏  |  浏览/下载：251/35  |  提交时间：2010/08/12 MM-HEMT  Shubnikov-de Hass oscillation  MOBILITY TRANSISTORS  ALLOY SCATTERING  HIGH-PERFORMANCE  GAAS   Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence 期刊论文  OAI收割 applied physics letters, 2002, 卷号: 80, 期号: 21, 页码: 3934-3936 Ling CC; Mui WK; Lam CH; Beling CD; Fung S; Lui MK; Cheah KW; Li KF; Zhao YW; Gong M 收藏  |  浏览/下载：87/9  |  提交时间：2010/08/12 ANTIMONIDE   Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates 期刊论文  OAI收割 journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 2429-2432 Cui LJ; Zeng YP; Wang BQ; Wu J; Zhu ZP; Lin LY 收藏  |  浏览/下载：69/6  |  提交时间：2010/08/12 HEMTS