中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [11]
采集方式
OAI收割 [11]
内容类型
期刊论文 [8]
会议论文 [3]
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2008 [1]
2003 [1]
2002 [1]
2000 [1]
1999 [5]
1998 [2]
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学科主题
半导体物理 [11]
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Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition
期刊论文
OAI收割
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L
;
Ma, XY
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/03/08
tensile strain
GaAsP/GaInP
photoluminescence
quantum well
laser diodes
LP-MOCVD
Whispering-gallery-likel modes in square resonators
期刊论文
OAI收割
ieee journal of quantum electronics, 2003, 卷号: 39, 期号: 9, 页码: 1106-1110
Guo WH
;
Huang YZ
;
Lu QY
;
Vu LJ
收藏
  |  
浏览/下载:408/3
  |  
提交时间:2010/08/12
microcavities
semiconductor lasers
square resonators
whispering-gallery (WG) modes
MICRODISK INJECTION-LASER
MICROCAVITIES
MICROLASERS
SIMULATION
RESONANCES
CAVITIES
EMISSION
CRYSTALS
Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate
期刊论文
OAI收割
applied physics letters, 2002, 卷号: 80, 期号: 20, 页码: 3769-3771
作者:
Xu B
收藏
  |  
浏览/下载:88/3
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
HIGH-POWER
LASER-DIODES
NM
Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction
期刊论文
OAI收割
acta physica sinica, 2000, 卷号: 49, 期号: 12, 页码: 2374-2377
Lian P
;
Yin T
;
Gao G
;
Zou DS
;
Chen CH
;
Li JJ
;
Shen GD
;
Ma XY
;
Chen LH
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/08/12
semiconductor lasers
high power
MOCVD
OPERATION
AlGaInP visible quantum well lasers for information technology
期刊论文
OAI收割
czechoslovak journal of physics, 1999, 卷号: 49, 期号: 5, 页码: 791-796
Yu JZ
;
Chen LH
;
Ma XY
;
Wang QM
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/08/12
HIGH-POWER OPERATION
DIODES
AlGaInP visible quantum well lasers for information technology
会议论文
OAI收割
1st czech-chinese workshop on advanced materials for optoelectronics (amfo 98), prague, czech republic, jun 15-17, 1998
Yu JZ
;
Chen LH
;
Ma XY
;
Wang QM
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/11/15
HIGH-POWER OPERATION
DIODES
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
会议论文
OAI收割
2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
strip detectors
silicon detectors
annealing
simulation
irradiation
N-EFF
JUNCTION DETECTORS
RADIATION-DAMAGE
MODELS
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
期刊论文
OAI收割
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1999, 卷号: 426, 期号: 1, 页码: 38-46
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2010/08/12
strip detectors
silicon detectors
annealing
simulation
irradiation
JUNCTION DETECTORS
RADIATION-DAMAGE
MODELS
N-EFF
High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition
期刊论文
OAI收割
ieee journal of quantum electronics, 1999, 卷号: 35, 期号: 10, 页码: 1535-1541
Yang GW
;
Hwu RJ
;
Xu ZT
;
Ma XY
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/08/12
quantum-well lasers
semiconductor diodes
semiconductor epitaxial layers
semiconductor lasers
semiconductor materials
NM DIODE-LASERS
WAVE-GUIDE
AMPLIFIER
FRONT-FACET POWER
Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
会议论文
OAI收割
semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998
Yang GW
;
Xu ZT
;
Xu JY
;
Ma XY
;
Zhang JM
;
Chen LH
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/10/29
strained quantum well
semiconductor lasers