中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [66]
采集方式
OAI收割 [66]
内容类型
期刊论文 [57]
会议论文 [9]
发表日期
2013 [2]
2011 [6]
2010 [3]
2009 [4]
2008 [2]
2007 [2]
更多
学科主题
半导体材料 [66]
筛选
浏览/检索结果:
共66条,第1-10条
帮助
限定条件
学科主题:半导体材料
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
发表日期升序
发表日期降序
题名升序
题名降序
作者升序
作者降序
Fabrication of an electro-absorption modulated distributed feedback laser by quantum well intermixing with an etching ion-implantation buffer layer
期刊论文
OAI收割
chinese optics letters, 2015, 卷号: 13, 期号: 8, 页码: 081301
Liangshun Han
;
Song Liang
;
Hongliang Zhu
;
Wei Wang
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2016/03/23
Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting
期刊论文
OAI收割
journal of semiconductors, 2013, 卷号: 34, 期号: 6, 页码: 063001
Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2014/05/08
Raman Spectra Analysis of GaN : Er Films Prepared by Ion Implantation
期刊论文
OAI收割
spectroscopy and spectral analysis, 2013, 卷号: 33, 期号: 3, 页码: 699-703
Tao Dong-yan
;
Liu Chao
;
Yin Chun-hai
;
Zeng Yi-ping
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2013/09/17
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
期刊论文
OAI收割
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L
;
Zhou, HY
;
Qu, SC
;
Wang, ZG
收藏
  |  
浏览/下载:91/0
  |  
提交时间:2012/02/06
Patterned substrate
Ion implantation
Ordered nanodots
Anodic aluminum oxide
QUANTUM DOTS
ISLANDS
GROWTH
SEMICONDUCTORS
NANOSTRUCTURES
COMPUTATION
INGAAS
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:63/1
  |  
提交时间:2011/07/05
Atom force microscopy
Nanostructures
Molecular-beam epitaxy
Nanomaterials
Semiconducting gallium arsenide
QUANTUM-DOTS
ANODIC ALUMINA
ARRAYS
PLACEMENT
INAS
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC
期刊论文
OAI收割
journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Wu, Hailei
;
Sun, Guosheng
;
Yang, Ting
;
Yan, Guoguo
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2012/06/14
Aluminum
Annealing
Ion implantation
Pressure effects
Semiconducting silicon compounds
Silicon carbide
Surface roughness
Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation
期刊论文
OAI收割
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 102002
Tan, Hairen
;
You, Jingbi
;
Zhang, Shuguang
;
Gao, Hongli
;
Yin, Zhigang
;
Bai, Yiming
;
Zhang, Xiulan
;
Zhang, Xingwang
;
Qu, Sheng
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2012/06/14
Metallic films
Plasmons
Silicides
Zinc oxide
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
会议论文
OAI收割
16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010
阎Zhou HY (Zhou Huiying)
;
Qu SC (Qu Shengchun)
;
Jin P (Jin Peng)
;
Xu B (Xu Bo)
;
Ye XL (Ye Xiaoling)
;
Liu JP (Liu Junpeng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2011/07/26
The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films
期刊论文
OAI收割
materials letters, MATERIALS LETTERS, 2011, 2011, 卷号: 65, 65, 期号: 4, 页码: 667-669, 667-669
作者:
Sun LL
;
Liu C
  |  
收藏
  |  
浏览/下载:62/7
  |  
提交时间:2011/07/05
Diluted magnetic semiconductors (DMSs)
Ion implantation
Room-temperature ferromagnetic properties
ROOM-TEMPERATURE
Diluted Magnetic Semiconductors (Dmss)
Ion implantatIon
Room-temperature Ferromagnetic Properties
Room-temperature
Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb
期刊论文
OAI收割
semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095010
Islam MR (Islam M. R.)
;
Hasan MM (Hasan M. M.)
;
Chen N (Chen N.)
;
Fukuzawa M (Fukuzawa M.)
;
Yamada M (Yamada M.)
收藏
  |  
浏览/下载:260/25
  |  
提交时间:2010/09/20
DILUTED MAGNETIC SEMICONDUCTORS
PHONON
FERROMAGNETISM
TEMPERATURE
GA1-XMNXAS
SPECTRA
STRAIN
LAYERS
GAAS
SPIN