机构

• 半导体研究所 [30]

采集方式

• OAI收割 [30]

内容类型

• 期刊论文 [26]
• 会议论文 [4]

发表日期

• 2010 [2]
• 2008 [1]
• 2006 [2]
• 2005 [1]
• 2003 [4]
• 2002 [3]
• 更多

学科主题

• 半导体材料 [30]

筛选

浏览/检索结果: 共30条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis 期刊论文  OAI收割 science china-technological sciences, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005 Huang TM (Huang TianMao); Chen NF (Chen NuoFu); Zhang XW (Zhang XingWang); Bai YM (BaiYiMing); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Zhang H (Zhang Han); Wang Y (Wang Yu); Wang YS (Wang YanShuo); Yang XL (Yang XiaoLi) 收藏  |  浏览/下载：25/0  |  提交时间：2010/11/14 polycrystalline silicon thin film  aluminum induced crystallization  (111) preferred orientation  INDUCED LAYER-EXCHANGE  AMORPHOUS-SILICON  SOLAR-CELLS  GLASS  SI  ORIENTATION  MODEL   Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文  OAI收割 diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376 Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.) 收藏  |  浏览/下载：27/0  |  提交时间：2010/12/28 Cubic boron nitride  Doping  Ion beam assisted deposition  X-ray photoelectron spectroscopy  RAY PHOTOELECTRON-SPECTROSCOPY  VAPOR-DEPOSITION  SI  NUCLEATION  GROWTH   Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文  OAI收割 physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299 Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD 收藏  |  浏览/下载：65/3  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  TEMPERATURE ALN INTERLAYERS  PHASE EPITAXY  OPTICAL-PROPERTIES  SURFACTANT  SUBSTRATE  STRESS  SI  REDUCTION  SAPPHIRE   Silicon thin films prepared in the transition region and their use in solar cells 期刊论文  OAI收割 solar energy materials and solar cells, 2006, 卷号: 90, 期号: 18-19, 页码: 3001-3008 Zhang S (Zhang S.); Liao X (Liao X.); Raniero L (Raniero L.); Fortunato E (Fortunato E.); Xu Y (Xu Y.); Kong G (Kong G.); Aguas H (Aguas H.); Ferreira I (Ferreira I.); Martins R (Martins R.) 收藏  |  浏览/下载：59/0  |  提交时间：2010/04/11 silicon  thin film  solar cell  HYDROGENATED AMORPHOUS-SILICON  SI  MICROSTRUCTURE   Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells 期刊论文  OAI收割 journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1900-1903 Hu ZH (Hu Zhihua); Liao XB (Liao Xianbo); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo) 收藏  |  浏览/下载：59/0  |  提交时间：2010/04/11 silicon  solar cells  photovoltaics  Raman scattering  MICROCRYSTALLINE SILICON  SI NANOCRYSTALS  VOLUME FRACTION  RAMAN  CRYSTALLINITY  FILMS   A new technique for boosting efficiency of silicon solar cells 期刊论文  OAI收割 solar energy materials and solar cells, 2005, 卷号: 86, 期号: 4, 页码: 585-591 Li JM; Chong M; Yang LQ; Xu JD; Duan XF; Gao M; Wang FL; Liu HT; Bian L; Chi X; Zhai YH 收藏  |  浏览/下载：43/0  |  提交时间：2010/03/17 silicon   Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline 会议论文  OAI收割 symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002 Zhang SB; Liao XB; Xu YY; Hu ZH; Zeng XB; Diao HW; Luo MC; Kong G 收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29 POLYMORPHOUS SILICON  LIGHT-SCATTERING  THIN-FILMS  SI  MICROCRYSTALLINITY  ABSORPTION  STATES   Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate 期刊论文  OAI收割 semiconductor science and technology, 2003, 卷号: 18, 期号: 11, 页码: 955-959 作者:  Xu B 收藏  |  浏览/下载：73/0  |  提交时间：2010/08/12 RELAXATION  SI  HETEROSTRUCTURES  KINETICS   In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130 作者:  Xu B 收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12 dislocation  interfaces  strain  molecular beam epitaxy  semiconductor IIIV materials  MOLECULAR-BEAM EPITAXY  SURFACE-MORPHOLOGY  TECHNOLOGY  GAAS(001)  BEHAVIOR  SI   Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 247, 期号: 3-4, 页码: 255-260 Tan LW; Wang QY; Wang J; Yu YH; Liu ZL; Lin LY 收藏  |  浏览/下载：51/0  |  提交时间：2010/08/12 heteroepitaxial growth  gamma-Al2O3  silicon  silicon on insulator  FILMS  SI  DEPOSITION  AL2O3