机构

• 半导体研究所 [33]

采集方式

• OAI收割 [33]

内容类型

• 期刊论文 [30]
• 会议论文 [3]

发表日期

• 2016 [1]
• 2011 [1]
• 2010 [1]
• 2009 [7]
• 2008 [1]
• 2006 [2]
• 更多

学科主题

• 半导体材料 [33]

筛选

浏览/检索结果: 共33条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Interface engineering for highly efficient graphene-on-silicon Schottky junction solar cells by introducing a hexagonal boron nitride interlayer 期刊论文  OAI收割 nano energy, 2016, 卷号: 28, 页码: 44-50 Jun-Hua Meng; Xin Liu; Xing-Wang Zhang; Yue Zhang; Hao-Lin Wang; Zhi-Gang Yin; Yong-Zhe Zhang; Heng Liu; Jing-Bi You; Hui Yan 收藏  |  浏览/下载：61/0  |  提交时间：2017/03/10 Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文  OAI收割 journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125 作者:  Wang C 收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05 Hydrogenated nanocrystalline silicon  Buffer layer  i/p interface  Solar cells  OPEN-CIRCUIT VOLTAGE  A-SI-H  P/I-INTERFACE  MICROCRYSTALLINE SILICON  VAPOR-DEPOSITION  FILMS  CAPACITANCE  EFFICIENCY  CRYSTALLINE  TEMPERATURE   Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 107, 期号: 8, 页码: art. no. 083701 作者:  Tan HR;  Yin ZG;  You JB;  Zhang SG;  Zhang XW 收藏  |  浏览/下载：145/29  |  提交时间：2010/05/24 LIGHT-EMITTING-DIODES  SPECTROSCOPY  EPITAXY  GROWTH  FILM  SIO2   Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文  OAI收割 applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720 Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP 收藏  |  浏览/下载：65/25  |  提交时间：2010/03/08 GAAS PHOTOCATHODES  GALLIUM-ARSENIDE  ALXGA1-XAS  DIFFUSION  SURFACE  ENERGY   Dislocation core effect scattering in a quasitriangle potential well 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102 作者:  Wei HY 收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08 aluminium compounds  carrier density  carrier mobility  dislocation density  dislocation scattering  gallium compounds  III-V semiconductors  semiconductor heterojunctions  wide band gap semiconductors   Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801 作者:  Yang JK;  Wei TB;  Duan RF 收藏  |  浏览/下载：73/3  |  提交时间：2010/03/08 VAPOR-PHASE EPITAXY  DISLOCATIONS  SUBSTRATE  LAYER   Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301 作者:  Jin P;  Wei HY;  Song HP 收藏  |  浏览/下载：310/47  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  II-VI semiconductors  indium compounds  interface states  polarisation  semiconductor heterojunctions  valence bands  wide band gap semiconductors  X-ray photoelectron spectra  zinc compounds   Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：68/0  |  提交时间：2010/03/08 aluminium compounds  gallium arsenide  III-V semiconductors  internal stresses  reflectivity  semiconductor heterojunctions  semiconductor quantum wells   Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 4, 页码: art. no. 043709 作者:  Zhang XW;  Yin ZG;  Song HP;  You JB 收藏  |  浏览/下载：80/3  |  提交时间：2010/03/08 LIGHT-EMITTING-DIODES  ZNO  ELECTROLUMINESCENCE  OFFSETS   Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114 作者:  Song HP;  Wei HY;  Zhang B 收藏  |  浏览/下载：198/0  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  indium compounds  semiconductor heterojunctions  semiconductor materials  valence bands  X-ray photoelectron spectra