机构

• 半导体研究所 [18]

采集方式

• OAI收割 [18]

内容类型

• 期刊论文 [18]

发表日期

• 2016 [2]
• 2013 [2]
• 2012 [2]
• 2011 [2]
• 2008 [2]
• 2006 [1]
• 更多

学科主题

• 半导体器件 [18]

筛选

浏览/检索结果: 共18条，第1-10条 帮助 限定条件 学科主题：半导体器件     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Finite element analysis of expansion-matched submounts for high-power laser diodes packaging 期刊论文  OAI收割 journal of semiconductors, 2016, 卷号: 37, 期号: 6, 页码: 064005 Ni Yuxi; Ma Xiaoyu; Jing Hongqi; Liu Suping 收藏  |  浏览/下载：22/0  |  提交时间：2017/03/16 Finite element analysis of expansion-matched submounts for high-power laser diodes packaging 期刊论文  OAI收割 journal of semiconductors, 2016, 卷号: 37, 期号: 6, 页码: 064005 Ni Yuxi; Ma Xiaoyu; Jing Hongqi; Liu Suping 收藏  |  浏览/下载：20/0  |  提交时间：2017/03/02 Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer 期刊论文  OAI收割 ieee journal of selected topics in quantum electronics, 2013, 卷号: 19, 期号: 4, 页码: 1500705 Feng MX(冯美鑫) 收藏  |  浏览/下载：14/0  |  提交时间：2014/06/03 A high power picosecond Nd YVO4 master oscillator power amplifier system pumped by 880nm diodes 期刊论文  OAI收割 laser physics, Laser Physics, 2013, 2013, 卷号: 23, 23, 期号: 7, 页码: 075302, 075302 作者:  S Yan, X Yan, H Yu, L Zhang, L Guo, W Sun, W Hou and X Lin   |  收藏  |  浏览/下载：12/0  |  提交时间：2014/04/09 The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes 期刊论文  OAI收割 journal of applied physics, 2012, 卷号: 112, 期号: 11, 页码: 113104 Qiao YB (Qiao, Yanbin); Feng SW (Feng, Shiwei); Xiong C (Xiong, Cong); Ma XY (Ma, Xiaoyu); Zhu H (Zhu, Hui); Guo CS (Guo, Chunsheng); Wei GH (Wei, Guanghua) 收藏  |  浏览/下载：15/0  |  提交时间：2013/04/18 Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2012, 2012, 卷号: 112, 112, 期号: 11, 页码: 113105, 113105 作者:  Chen P (Chen, P.);  Feng MX (Feng, M. X.);  Jiang DS (Jiang, D. S.);  Zhao DG (Zhao, D. G.);  Liu ZS (Liu, Z. S.)   |  收藏  |  浏览/下载：9/0  |  提交时间：2013/03/26 Thermal characteristic of GaAs-based laser diodes 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 11, 页码: 2134-2137 Qiao, Yanbin; Feng, Shiwei; Ma, Xiaoyu; Wang, Xiaowei; Guo, Chunsheng; Deng, Haitao; Zhang, Guangchen 收藏  |  浏览/下载：36/0  |  提交时间：2012/06/14 Degradation  Diodes  Electric properties  Gallium arsenide  Hybrid materials  Optical properties  Semiconducting gallium  Semiconductor diodes  Testing  Thermodynamic properties   High power885 nm laser diodes with graded optical expand structures for small divergence angle 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 12, 页码: 2382-2387 Wang, Jun; Bai, Yiming; Liu, Yuanyuan; He, Weili; Xiong, Cong; Wang, Cuiluan; Feng, Xiaoming; Zhong, Li; Liu, Suping; Ma, Xiaoyu 收藏  |  浏览/下载：26/0  |  提交时间：2012/06/14 Energy efficiency  Epitaxial growth  High power lasers  Optimization  Pumping(laser)  Quantum well lasers  Semiconductor quantum wells   Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 266-269 Wang, XH; Wang, XL; Feng, C; Xiao, HL; Yang, CB; Wang, JX; Wang, BZ; Ran, JX; Wang, CM 收藏  |  浏览/下载：73/8  |  提交时间：2010/03/08 GAS SENSORS  HEMT STRUCTURES  MOBILITY  TRANSISTORS  TEMPERATURE  SURFACES  PT/GAN  GROWTH  PD/GAN  MOCVD   Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes 期刊论文  OAI收割 electronics letters, 2008, 卷号: 44, 期号: 7, 页码: 474-u6 Wu, D; Wang, H; Wu, B; Ni, H; Huang, S; Xiong, Y; Wang, P; Han, Q; Niu, Z; Tangring, I; Wang, SM 收藏  |  浏览/下载：45/2  |  提交时间：2010/03/08 CONTINUOUS-WAVE OPERATION  1.3-MU-M