机构

• 半导体研究所 [149]

采集方式

• OAI收割 [149]

内容类型

• 期刊论文 [130]
• 会议论文 [19]

发表日期

• 2015 [3]
• 2014 [3]
• 2013 [9]
• 2012 [6]
• 2011 [13]
• 2010 [6]
• 更多

学科主题

• 半导体材料 [149]

筛选

浏览/检索结果: 共149条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Electron mobility of inverted InAs/GaSb quantum well structure 期刊论文  OAI收割 Solid State Communications, 2017, 卷号: 267, 页码: 29-32 作者:  Wenjun Huang;  Wenquan Ma;  Jianliang Huang;  Yanhua Zhang;  Yulian Cao 收藏  |  浏览/下载：26/0  |  提交时间：2018/05/23 The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs 期刊论文  OAI收割 IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 8, 页码: 3084-3087 Xiangting Kong; Renrong Liang; Xuliang Zhou; Shiyan Li; Mengqi Wang; Honggang Liu; Jing Wang; Wei Wang; Jiaoqing Pan 收藏  |  浏览/下载：31/0  |  提交时间：2017/03/10 High-Mobility In0.23Ga0.77As Channel MOSFETs Grown on Ge/Si Virtual Substrate by MOCVD 期刊论文  OAI收割 ieee transactions on electron devices, 2015, 卷号: 62, 期号: 5, 页码: 1456-1459 Xiangting Kong; Xuliang Zhou; Shiyan Li; Hudong Chang; Honggang Liu; Jing Wang; Renrong Liang; Wei Wang; Jiaoqing Pan 收藏  |  浏览/下载：23/0  |  提交时间：2016/03/23 Specific detection of mercury(II) irons using AlGaAs/InGaAs high electron mobility transistors 期刊论文  OAI收割 journal of crystal growth, 2015, 卷号: 425, 页码: 381-384 Chengyan Wang; Yang Zhang; Min Guan; Lijie Cui; Kai Ding; Bintian Zhang; Zhang Lin; Feng Huang; Yiping Zeng 收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29 A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor 期刊论文  OAI收割 chin. phys. lett., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504 Lei Cui; Quan Wang; XiaoLiang Wang; HongLing Xiao; CuiMei Wang; LiJuan Jiang; Chun Feng; HaiBo Yin; JiaMin Gong; BaiQuan Li; ZhanGuo Wang 收藏  |  浏览/下载：27/0  |  提交时间：2016/03/29 Mobility limited by cluster scattering in ternary alloy quantum wires 期刊论文  OAI收割 chinese physics b, 2014, 卷号: 23, 期号: 1, 页码: 017305 Zhang, H; Yang, SY; Liu, GP; Wang, JX; Jin, DD; Li, HJ; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：14/0  |  提交时间：2015/05/11 Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor 期刊论文  OAI收割 journal of alloys and compounds, 2014, 卷号: 605, 页码: 113-117 Li, W; Wang, XL; Qu, SQ; Wang, Q; Xiao, HL; Wang, CM; Peng, EC; Hou, X; Wang, ZG 收藏  |  浏览/下载：15/0  |  提交时间：2015/03/25 Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors 期刊论文  OAI收割 ieee electron device letters, 2014, 卷号: 35, 期号: 3, 页码: 333-335 Ding, K; Wang, CY; Zhang, BT; Zhang, Y; Guan, M; Cui, LJ; Zhang, YW; Zeng, YP; Lin, Z; Huang, F 收藏  |  浏览/下载：19/0  |  提交时间：2015/04/02 Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier 期刊论文  OAI收割 applied physics express, 2013, 卷号: 6, 期号: 5, 页码: 051201 Kong, Xin; Wei, Ke; Liu, Guoguo; Liu, Xinyu; Wang, Cuimei; Wang, Xiaoliang 收藏  |  浏览/下载：10/0  |  提交时间：2013/08/27 Electron mobility limited by surface and interface roughness scattering in AlxGaN-GaN quantum wells 期刊论文  OAI收割 chinese physics b, 2013, 卷号: 22, 期号: 7, 页码: 7305 Wang Jian-Xia, Yang Shao-Yan, Wang Jun, Liu Gui-Peng, Li Zhi-Wei, Li Hui-Jie, Jin Dong-Dong, Liu Xiang-Lin, Zhu Qin-Sheng, Wang Zhan-Guo 收藏  |  浏览/下载：15/0  |  提交时间：2014/03/18