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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [46]
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OAI收割 [46]
内容类型
期刊论文 [36]
会议论文 [10]
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2015 [1]
2011 [5]
2010 [8]
2009 [1]
2008 [6]
2007 [4]
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学科主题
光电子学 [46]
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Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness
期刊论文
OAI收割
journal of applied physics, 2015, 卷号: 117, 页码: 055709
J. Yang
;
D. G. Zhao
;
D. S. Jiang
;
P. Chen
;
J. J. Zhu
;
Z. S. Liu
;
L. C. Le
;
X. J. Li
;
X. G. He
;
J. P. Liu
;
H. Yang
;
Y. T. Zhang
;
G. T. Du
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2016/03/23
Theoretical investigation on the absorption enhancement of the crystalline silicon solar cells by pyramid texture coated with SiNx:H layer
期刊论文
OAI收割
solar energy, 2011, 卷号: 85, 期号: 3, 页码: 530-537
Zhao L
;
Zuo YH
;
Zhou CL
;
Li HL
;
Diao HW
;
Wang WJ
收藏
  |  
浏览/下载:57/9
  |  
提交时间:2011/07/05
Crystalline silicon solar cell
Absorption enhancement
Pyramid texture
SiNx:H layer
COUPLED-WAVE ANALYSIS
HIGH-EFFICIENCY
LIGHT
FABRICATION
GRATINGS
Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507
Yu X
;
Gu YX
;
Wang Q
;
Wei X
;
Chen LH
收藏
  |  
浏览/下载:65/4
  |  
提交时间:2011/07/06
type-II 'W' quantum well
Burt-Foreman Hamiltonian
finite element methods
LASERS
ALLOYS
A new method to measure the carrier concentration of p-GaN
期刊论文
OAI收割
acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804
Zhou M
;
Zhao DG
收藏
  |  
浏览/下载:66/7
  |  
提交时间:2011/07/05
p-GaN
carrier concentration measurement
ultraviolet photodetector
LASER-DIODES
FILMS
Thermo-optical tunable planar ridge microdisk resonator in silicon-on-insulator
期刊论文
OAI收割
optics express, OPTICS EXPRESS, 2011, 2011, 卷号: 19, 19, 期号: 12, 页码: 11220-11227, 11220-11227
作者:
Song, JF
;
Fang, Q
;
Luo, XS
;
Cai, H
;
Liow, TY
  |  
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2012/02/05
MICROCAVITY
PHOTONICS
CHIP
SOI
Microcavity
Photonics
Chip
Soi
Mode Selectivity in Bragg Reflection Waveguide Lasers
期刊论文
OAI收割
ieee photonics technology letters, IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 2011, 卷号: 23, 23, 期号: 14, 页码: 1025-1027, 1025-1027
作者:
Tong CZ
;
Bijlani BJ
;
Zhao LJ
;
Alali S
;
Han Q
  |  
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2012/01/06
OPTICS
Optics
Enhancement of quality factor for TE whispering-gallery modes in microcylinder resonators
期刊论文
OAI收割
optics express, 2010, 卷号: 18, 期号: 12, 页码: 13057-13062
Yang YD (Yang Yue-De)
;
Huang YZ (Huang Yong-Zhen)
;
Guo WH (Guo Wei-Hua)
;
Lu QY (Lu Qiaoyin)
;
Donegan JF (Donegan John F.)
收藏
  |  
浏览/下载:78/1
  |  
提交时间:2010/07/05
LASERS
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin)
;
Zhu JJ (Zhu Jian-Jun)
;
Chen GF (Chen Gui-Feng)
;
Zhang SM (Zhang Shu-Ming)
;
Jiang DS (Jiang De-Sheng)
;
Liu ZS (Liu Zong-Shun)
;
Zhao DG (Zhao De-Gang)
;
Wang H (Wang Hui)
;
Wang YT (Wang Yu-Tian)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:126/4
  |  
提交时间:2010/04/13
GaN
Si (111) substrate
metalorganic chemical vapour deposition
AlN buffer layer
AlGaN interlayer
: VAPOR-PHASE EPITAXY
CRACK-FREE GAN
STRESS-CONTROL
SI(111)
DEPOSITION
ALXGA1-XN
FILM
Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802
Guo X (Guo Xi)
;
Wang H (Wang Hui)
;
Jiang DS (Jiang De-Sheng)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Zhu JJ (Zhu Jian-Jun)
;
Liu ZS (Liu Zong-Shun)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2010/11/02
InGaN
In-plane grazing incidence x-ray diffraction
reciprocal space mapping
biaxial strain
CRITICAL LAYER THICKNESS
OPTICAL-PROPERTIES
LATTICE-CONSTANTS
GAN
HETEROSTRUCTURES
ALLOYS
WELLS
The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117801
Hu XL (Hu Xiao-Long)
;
Zhang JY (Zhang Jiang-Yong)
;
Shang JZ (Shang Jing-Zhi)
;
Liu WJ (Liu Wen-Jie)
;
Zhang BP (Zhang Bao-Ping)
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/12/28
exciton-longitudinal-optical-phonon
InGaN/GaN single quantum well
GaN cap layer
Huang-Rhys factor