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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [47]
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OAI收割 [42]
iSwitch采集 [5]
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期刊论文 [43]
会议论文 [4]
发表日期
2011 [5]
2010 [1]
2009 [1]
2008 [1]
2007 [2]
2006 [6]
更多
学科主题
半导体物理 [17]
半导体材料 [15]
光电子学 [6]
半导体器件 [2]
微电子学 [2]
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Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers
期刊论文
iSwitch采集
Acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: 6
作者:
Tang Hai-Ma
;
Zheng Zhong-Shan
;
Zhang En-Xia
;
Yu Fang
;
Li Ning
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/05/12
Separation by oxygen implantation
Buried oxide
Nitrogen implantation
Positive charge density
A practical route towards fabricating GaN nanowire arrays
期刊论文
OAI收割
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ
;
Huang, J
;
Gong, XJ
;
Wang, JF
;
Xu, K
;
Qiu, YX
;
Cai, DM
;
Zhou, TF
;
Ren, GQ
;
Yang, H
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
EPITAXIAL LATERAL OVERGROWTH
CHEMICAL-VAPOR-DEPOSITION
WELL NANOROD ARRAYS
ULTRAVIOLET-LIGHT
GROWTH
NANOGENERATORS
DISLOCATIONS
BRIGHTNESS
LAYERS
Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers
期刊论文
OAI收割
acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104
作者:
Yu F
收藏
  |  
浏览/下载:93/6
  |  
提交时间:2011/07/06
separation by oxygen implantation
buried oxide
nitrogen implantation
positive charge density
RADIATION HARDNESS
IMPLANTING NITROGEN
ION-IMPLANTATION
IMPROVEMENT
TECHNOLOGY
OXYGEN
LAYER
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
OAI收割
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy
期刊论文
OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102
作者:
He JF
;
Wang HL
;
Shang XJ
;
Li MF
;
Zhu Y
  |  
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2012/01/06
1.3 MU-M
STRAIN RELIEF
LASERS
SUBSTRATE
PHOTOLUMINESCENCE
DISLOCATIONS
OPERATION
RANGE
1.3 Mu-m
Strain Relief
Lasers
Substrate
Photoluminescence
Dislocations
Operation
Range
Optical properties of UO2 and PuO2
期刊论文
OAI收割
journal of nuclear materials, JOURNAL OF NUCLEAR MATERIALS, 2010, 2010, 卷号: 400, 400, 期号: 2, 页码: 151-156, 151-156
作者:
Shi HL (Shi Hongliang)
;
Chu MF (Chu Mingfu)
;
Zhang P (Zhang Ping)
;
Zhang, P, Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China. zhang_ping@iapcm.ac.cn
  |  
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2010/06/18
ELECTRONIC-STRUCTURE
Electronic-structure
Uranium-dioxide
Point-defects
Photoemission
Energy
Approximation
Energetics
Plutonium
Crystal
Spectra
URANIUM-DIOXIDE
POINT-DEFECTS
PHOTOEMISSION
ENERGY
APPROXIMATION
ENERGETICS
PLUTONIUM
CRYSTAL
SPECTRA
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
收藏
  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
OAI收割
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
收藏
  |  
浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer
期刊论文
OAI收割
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 800-803
Fang CB (Fang Cebao)
;
Wang XL (Wang Xiaoliang)
;
Xiao HL (Xiao Hongling)
;
Hu GX (Hu Guoxin)
;
Wang CM (Wang Cuimei)
;
Wang XY (Wang Xiaoyan)
;
Li JP (Li Jianping)
;
Wang JX (Wang Junxi)
;
Li CJ (Li Chengji)
;
Zeng YP (Zeng Yiping)
;
Li JM (Li Jinmin)
;
Wang ZG (Wang Zanguo)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/03/29
deep defect
Investigation of optical quenching of photoconductivity in high-resistivity gan epilayer
期刊论文
iSwitch采集
Journal of crystal growth, 2007, 卷号: 298, 页码: 800-803
作者:
Fang, Cebao
;
Wang, Xiaoliang
;
Xiao, Hongling
;
Hu, Guoxin
;
Wang, Cuimei
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2019/05/12
Deep defect
Optical quenching
Mocvd
Gan