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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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半导体研究所 [44]
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OAI收割 [44]
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期刊论文 [35]
会议论文 [9]
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2011 [6]
2010 [2]
2009 [4]
2008 [2]
2007 [3]
2006 [7]
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半导体材料 [44]
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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF
;
Chen, YH
;
Lei, W
;
Zhou, XL
;
Luo, S
;
Hu, YZ
;
Wang, LJ
;
Yang, T
;
Wang, ZG
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/02/06
RAMAN-SCATTERING
SEMICONDUCTING NANOWIRES
OPTOELECTRONIC DEVICES
PHOSPHIDE NANOWIRES
OPTICAL PHONONS
SILICON
CRYSTALS
SPECTRA
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:
Song HP
;
Shi K
;
Sang L
;
Wei HY
收藏
  |  
浏览/下载:56/3
  |  
提交时间:2011/07/05
Metal organic chemical vapor deposition
Sapphire
Zinc compounds
Semiconducting II-VI materials
VAPOR-PHASE EPITAXY
OPTICAL-PROPERTIES
ZNO NANORODS
RAMAN-SCATTERING
M-PLANE
FILMS
PHOTOLUMINESCENCE
DEPOSITION
NANOWIRES
FIELDS
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:
Liu XF
;
Yan GG
;
Zheng L
;
Dong L
收藏
  |  
浏览/下载:37/3
  |  
提交时间:2011/07/05
4H-SiC
Raman scattering
LOPC modes
transport properties
SILICON-CARBIDE
LIGHT
GAP
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:
Pan X
收藏
  |  
浏览/下载:80/5
  |  
提交时间:2011/07/05
Sandwich structure
Stress
Aluminum nitride
Gallium nitride
Silicon
PHONON DEFORMATION POTENTIALS
WURTZITE ALN
SILICON
STRESS
TRANSISTORS
EPITAXY
LAYERS
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy
期刊论文
OAI收割
applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:
Jin P
收藏
  |  
浏览/下载:53/4
  |  
提交时间:2011/07/07
Photoluminescence
Raman scattering
Pulsed atomic layer epitaxy
AlGaN alloys
Quantitative surface enhanced Raman scattering detection based on the "sandwich" structure substrate
期刊论文
OAI收割
spectrochimica acta part a-molecular and biomolecular spectroscopy, 2011, 卷号: 79, 期号: 3, 页码: 625-630
作者:
Tang AW
收藏
  |  
浏览/下载:82/5
  |  
提交时间:2011/07/15
SILVER NANORODS
HOT-SPOTS
ACTIVE SUBSTRATE
NANOWIRE ARRAYS
SPECTROSCOPY
SERS
NANOPARTICLES
SENSITIVITY
REDUCTION
STABILITY
Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb
期刊论文
OAI收割
semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095010
Islam MR (Islam M. R.)
;
Hasan MM (Hasan M. M.)
;
Chen N (Chen N.)
;
Fukuzawa M (Fukuzawa M.)
;
Yamada M (Yamada M.)
收藏
  |  
浏览/下载:260/25
  |  
提交时间:2010/09/20
DILUTED MAGNETIC SEMICONDUCTORS
PHONON
FERROMAGNETISM
TEMPERATURE
GA1-XMNXAS
SPECTRA
STRAIN
LAYERS
GAAS
SPIN
Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 9, 页码: art. no. 094320
Tang AW (Tang Aiwei)
;
Qu SC (Qu Shengchun)
;
Hou YB (Hou Yanbing)
;
Teng F (Teng Feng)
;
Tan HR (Tan Hairen)
;
Liu J (Liu Jie)
;
Zhang XW (Zhang Xingwang)
;
Wang YS (Wang Yongsheng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/12/12
THIN-FILM
OPTICAL-PROPERTIES
RAMAN-SCATTERING
MEMORY DEVICES
NANOPARTICLES
NANOCRYSTALS
MOLECULE
CLUSTERS
Gap states and microstructure of microcrystalline silicon thin films
期刊论文
OAI收割
acta physica sinica, 2009, 卷号: 58, 期号: 8, 页码: 5716-5720
Peng WB
;
Liu SY
;
Xiao HB
;
Zhang CS
;
Shi MJ
;
Zeng XB
;
Xu YY
;
Kong GL
;
Yu YD
收藏
  |  
浏览/下载:85/3
  |  
提交时间:2010/03/08
gap states
grain boundary
microcrystalline silicon
modulated photocurrent
Raman scattering study on Ga1-xMnxAs prepared by Mn ions implantation, deposition and post-annealing
期刊论文
OAI收割
crystal research and technology, 2009, 卷号: 44, 期号: 2, 页码: 215-220
Islam MR
;
Chen NF
;
Yamada M
收藏
  |  
浏览/下载:224/44
  |  
提交时间:2010/03/08
Raman scattering
ferromagnetic
semiconductor
GaMnAs
Mn ions implantation
deposition