机构

• 近代物理研究所 [37]

采集方式

• OAI收割 [37]

内容类型

• 期刊论文 [28]
• 会议论文 [9]

发表日期

• 2020 [2]
• 2019 [1]
• 2018 [4]
• 2017 [4]
• 2016 [3]
• 2015 [1]
• 更多

学科主题

筛选

浏览/检索结果: 共37条，第1-10条 帮助 限定条件 专题：近代物理研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 卷号: 478, 页码: 5-10 作者:  Huang, Mingmin;  Yang, Zhimei;  Wang, Shaomin;  Liu, Jiyuan;  Gong, Min   |  收藏  |  浏览/下载：32/0  |  提交时间：2021/12/15 Schottky barrier diodes  Raman spectroscopy  Recrystallization effect  Swift heavy ion  SiC   Ti3AlC2, a candidate structural material for innovative nuclear energy system: The microstructure phase transformation and defect evolution induced by energetic heavy-ion irradiation 期刊论文  OAI收割 ACTA MATERIALIA, 2020, 卷号: 189, 页码: 188-203 作者:  Deng, Tianyu;  Sun, Jianrong;  Tai, Pengfei;  Wang, Yuyu;  Zhang, Linqi   |  收藏  |  浏览/下载：26/0  |  提交时间：2022/01/18 MAX phase  Ion irradiation  Microstructure transformation  Recovery of microstructure  Mechanisms   Damage and recovery behavior of 4H-SiC implanted with He ions 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 449, 页码: 54-57 作者:  Zhang, Chonghong;  Yang, Yitao;  Su, Changhao;  Ding, Zhaonan;  Song, Yin   |  收藏  |  浏览/下载：98/0  |  提交时间：2019/11/10 4H-SiC  He ions implantation  Nanoindentation  Raman  Graphite  Thermal annealing   Microstructure damage in silicon carbide fiber induced by 246.8-MeV Ar-ion irradiation 会议论文  OAI收割 作者:  Zhang, Liqing;  Zhang, Chonghong;  Huang, Qing;  Ding, Zhaonan;  Yan, Tingxing   |  收藏  |  浏览/下载：40/0  |  提交时间：2019/03/27 SiC fibers  Ar-ion irradiation  TEM  Raman scattering spectra  SEM   Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2018, 卷号: 440, 页码: 814-820 作者:  Xian, Y. Q.;  Zhang, L. Q.;  Li, J. Y.;  Su, C. H.;  Chen, Y. G.   |  收藏  |  浏览/下载：36/0  |  提交时间：2018/05/22 GaN  Highly-charged bismuth-ion irradiation  Raman spectrum  Varying temperature photoluminescence (PL) spectrum  Optoelectric properties   Damage to epitaxial GaN layer on Al2O3 by 290-MeV U-238(32+) ions irradiation 期刊论文  OAI收割 SCIENTIFIC REPORTS, 2018, 卷号: 8, 页码: 4121 作者:  Zhang, L. Q.;  Zhang, C. H.;  Li, J. J.;  Meng, Y. C.;  Yang, Y. T.   |  收藏  |  浏览/下载：28/0  |  提交时间：2018/05/31 Microstructure damage in silicon carbide fiber induced by 246.8-MeV Ar-ion irradiation 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 435, 页码: 169-173 作者:  Zhang, LQ (   |  收藏  |  浏览/下载：10/0  |  提交时间：2019/08/04 Damage produced on GaN surface by highly charged Krq+ irradiation 期刊论文  OAI收割 NUCLEAR SCIENCE AND TECHNIQUES, 2017, 卷号: 28, 页码: 6 作者:  Zhang, Chong-Hong;  Yan, Ting-Xing;  Ding, Zhao-Nan;  Liu, Hui-Ping;  Li, Jin-Yu   |  收藏  |  浏览/下载：26/0  |  提交时间：2018/05/31 GaN  Highly charged Krypton ion  AFM  XPS  UV-Vis transmittance spectra  PL  Raman spectra   Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2017, 卷号: 406, 页码: 571-577 作者:  Li, Jj.;  Zhang, C. H.;  Zhang, L. Q.;  Song, Y.;  Yan, T. X.   |  收藏  |  浏览/下载：10/0  |  提交时间：2018/05/08 GaN  Highly-charged bismuth ion irradiation  AFM  XPS  Raman scattering spectrum  PL   Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer 会议论文  OAI收割 作者:  Song, Y.   |  收藏  |  浏览/下载：13/0  |  提交时间：2018/08/20 GaN  Highly-charged bismuth ion irradiation  AFM  XPS  Raman scattering spectrum  PL