机构

• 半导体研究所 [36]

采集方式

• OAI收割 [36]

内容类型

• 期刊论文 [34]
• 会议论文 [2]

发表日期

• 2011 [3]
• 2010 [5]
• 2009 [1]
• 2008 [2]
• 2006 [4]
• 2005 [2]
• 更多

学科主题

• 半导体材料 [36]

筛选

浏览/检索结果: 共36条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113 Jin, L; Zhou, HY; Qu, SC; Wang, ZG 收藏  |   Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |   Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文  OAI收割 journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 314, 314, 期号: 1, 页码: 141-145, 141-145 作者:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ   |  收藏  |   Photoexcited charge current for the presence of pure spin current 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 96, 期号: 26, 页码: art. no. 262108 Liu Y (Liu Yu); Chen YH (Chen Yonghai); Wang ZG (Wang Zhanguo) 收藏  |   The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy 期刊论文  OAI收割 solid state communications, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994 Song HP (Song H. P.); Zheng GL (Zheng G. L.); Yang AL (Yang A. L.); Guo Y (Guo Y.); Wei HY (Wei H. Y.); Li CM (Li C. M.); Yang SY (Yang S. Y.); Liu XL (Liu X. L.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.) 收藏  |   Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546 Li ZW; Xu XQ; Wang J; Liu JM; Liu XL; Yang SY; Zhu QS; Wang ZG 收藏  |   IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES 期刊论文  OAI收割 international journal of modern physics b, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450 作者:  Hao GD 收藏  |   Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films 期刊论文  OAI收割 physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 81, 81, 期号: 23, 页码: art. no. 235201, Art. No. 235201 作者:  Khazen K (Khazen Kh.);  von Bardeleben HJ (von Bardeleben H. J.);  Cantin JL (Cantin J. L.);  Mauger A (Mauger A.);  Chen L (Chen L.)   |  收藏  |   Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation 期刊论文  OAI收割 japanese journal of applied physics, 2009, 卷号: 48, 期号: 2, 页码: art. no. 021001 作者:  Wei XC;  Duan RF;  Ding K 收藏  |   Anisotropic exchange splitting of excitons in (001)GaAs/Al0.3Ga0.7As superlattice studied by reflectance difference spectroscopy 期刊论文  OAI收割 journal of applied physics, 2008, 卷号: 104, 期号: 1, 页码: art. no. 013106 Zhou, ZY; Tang, CG; Chen, YH; Wang, ZG 收藏  |