机构

• 半导体研究所 [13]

采集方式

• OAI收割 [13]

内容类型

• 期刊论文 [12]
• 会议论文 [1]

发表日期

• 2011 [2]
• 2009 [1]
• 2008 [1]
• 2006 [3]
• 2005 [2]
• 2004 [2]
• 更多

学科主题

• 半导体材料 [13]

筛选

浏览/检索结果: 共13条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文  OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: article no.69 作者:  Song HP;  Wei HY;  Li CM;  Jiao CM 收藏  |  浏览/下载：65/4  |  提交时间：2011/07/05 CATHODOLUMINESCENCE CHARACTERIZATION  GALLIUM NITRIDE  STRESSES  LAYERS  HETEROSTRUCTURE  DEPOSITION  CONSTANTS  MECHANISM  SAPPHIRE  STRAIN   Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467 作者:  Pan X 收藏  |  浏览/下载：81/5  |  提交时间：2011/07/05 Sandwich structure  Stress  Aluminum nitride  Gallium nitride  Silicon  PHONON DEFORMATION POTENTIALS  WURTZITE ALN  SILICON  STRESS  TRANSISTORS  EPITAXY  LAYERS   Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition 期刊论文  OAI收割 surface & coatings technology, 2009, 卷号: 203, 期号: 10-11, 页码: 1452-1456 作者:  Tan HR;  Zhang XW;  You JB;  Fan YM 收藏  |  浏览/下载：262/33  |  提交时间：2010/03/08 Cubic boron nitride  Stress relaxation  Ion beam assisted deposition  Fourier transformed infrared spectroscopy   Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文  OAI收割 microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111 Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08 AlGaN/GaN  high electron mobility transistor (HEMT)  Si (111)   Nanoinstabilities as revealed by shrinkage of nanocavities in silicon during irradiation 期刊论文  OAI收割 international journal of nanotechnology, 2006, 卷号: 3, 期号: 4 sp.iss.si, 页码: 492-516 Zhu, XF (Zhu, Xianfang); Wang, ZG (Wang, Zhanguo) 收藏  |  浏览/下载：60/0  |  提交时间：2010/03/29 nanocavity  nanoparticle  nanoinstabilities  open volume defect  thermodynamic nonequilibrium  nanosize  nanotime  energetic beam irradiation  amorphous structure  nanocurvature  surface energy  WALLED CARBON NANOTUBES  AMORPHOUS-SILICON  ION IRRADIATION  PREFERENTIAL AMORPHIZATION  IN-SITU  INSTABILITY  BEAM  IMPLANTATION  CAVITIES  POINT   Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文  OAI收割 optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231 Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua) 收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11 in doping  cracks  Si(111) substrate  LT-AlGaN interlayer  metalorganic chemical vapor deposition  GaN  PHASE EPITAXY  INDIUM-SURFACTANT  OPTICAL-PROPERTIES  SI(111)  STRESS  FILMS   Influence of dislocation stress field on distribution of quantum dots 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133 作者:  Xu B 收藏  |  浏览/下载：55/0  |  提交时间：2010/04/11 stress  surface structure  semiconducting III-V materials  MOLECULAR-BEAM EPITAXY  STRAIN  THICKNESS   Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of crystal growth, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340 作者:  Li DB;  Wei HY;  Han XX 收藏  |  浏览/下载：58/22  |  提交时间：2010/03/17 cracks   Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2005, 卷号: 25, 期号: 4, 页码: 592-596 作者:  Jin P;  Xu B 收藏  |  浏览/下载：60/0  |  提交时间：2010/03/17 stress   Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of crystal growth, 2004, 卷号: 273, 期号: 1-2, 页码: 79-85 Wu, JJ; Li, DB; Lu, Y; Han, XX; Li, JM; Wei, HY; Kang, TT; Wang, XH; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：74/0  |  提交时间：2010/03/17 cracks