中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 光电子学 [389]
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Angled-cavity lasers with photonic-crystal structure and high-order surface gratings 期刊论文  OAI收割
Semiconductor Science and Technology, 2017, 卷号: 32, 期号: 1, 页码: 01LT01 (7pp)
作者:  
Y Liu;  H W Qu;  S Y Zhao;  X Y Zhou;  Y F Wang
收藏  |  浏览/下载:14/0  |  提交时间:2018/07/02
Electrically-driven spectrally-broadened random lasing based on disordered photonic crystal structures 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2017, 卷号: 11, 页码: 031113
作者:  
X. J. Guo;  Y. F. Wang;  Y. F. Jia;  W. H. Zheng
收藏  |  浏览/下载:32/0  |  提交时间:2018/07/02
Enhancement of luminescence from Er-doped Si by photonic crystal gradient double-heterostructuremicrocavity 期刊论文  OAI收割
Optics & Laser Technology, 2017, 卷号: 89, 页码: 69–74
作者:  
Y. Wang;  J.M. An;  Y.D. Wu;  X.W. Hu
收藏  |  浏览/下载:16/0  |  提交时间:2018/07/02
Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文  OAI收割
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
作者:  
X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN
收藏  |  浏览/下载:20/0  |  提交时间:2018/07/11
Experimentally simulating quantum walks with self-collimated light 期刊论文  OAI收割
scientific reports, 2016, 卷号: 6, 页码: 28610
F. Qi; Y. F. Wang; Q. Y. Ma; W. H. Zheng
收藏  |  浏览/下载:21/0  |  提交时间:2017/03/16
XPS study of impurities in Si-doped AlN film 期刊论文  OAI收割
surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:28/0  |  提交时间:2017/03/10
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文  OAI收割
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10
Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割
applied physics a, 2016, 卷号: 122, 期号: 9
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:13/0  |  提交时间:2017/03/10
Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文  OAI收割
superlattices and microstructures, 2016, 卷号: 97, 页码: 186-192
X. Li; D.G. Zhao; J. Yang; D.S. Jiang; Z.S. Liu; P. Chen; J.J. Zhu; W. Liu; X.G. He; X.J. Li; F. Liang; L.Q. Zhang; J.P. Liu; H. Yang; Y.T. Zhang; G.T. Du
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10
Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文  OAI收割
chemical physics letters, 2016, 卷号: 651, 页码: 76-79
F. Liang; P. Chen; D.G. Zhao; D.S. Jiang; Z.S. Liu; J.J. Zhu; J. Yang; W. Liu; X.G. He; X.J. Li; X. Li; S.T. Liu; H. Yang; L.Q. Zhang; J.P. Liu; Y.T. Zhang; G.T. Du
收藏  |  浏览/下载:20/0  |  提交时间:2017/03/10