中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
机构
采集方式
内容类型
发表日期
学科主题
  • 光电子学 [44]
筛选

浏览/检索结果: 共44条，第1-10条 帮助

限定条件    
条数/页： 排序方式：
Strain Field Mapping of Dislocations in a Ge/Si Heterostructure 期刊论文  OAI收割
plos one, 2013, 卷号: 8, 期号: 4, 页码: e62672
Liu, Quanlong; Zhao, Chunwang; Su, Shaojian; Li, Jijun; Xing, Yongming; Cheng, Buwen
收藏  |  浏览/下载：14/0  |  提交时间：2013/08/27
Strain Field Mapping of Dislocations in a GeSi Heterostructure 期刊论文  OAI收割
plos one, PLOS ONE, 2013, 2013, 卷号: 8, 8, 期号: 4
作者:  Quanlong Liu , Chunwang Zhao ,Shaojian Su , Jijun Li , Yongming Xing , Buwen Cheng
  |  收藏  |  浏览/下载：11/0  |  提交时间：2014/04/04
Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis 期刊论文  OAI收割
optics and lasers in engineering, 2012, 卷号: 50, 期号: 5, 页码: 796-799
Liu, QL; Zhao, CW; Xing, YM; Su, SJ; Cheng, BW
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/17
A practical route towards fabricating GaN nanowire arrays 期刊论文  OAI收割
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H
收藏  |  浏览/下载：25/0  |  提交时间：2012/02/06
Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers 期刊论文  OAI收割
physical review b, 2010, 卷号: 81, 期号: 12, 页码: art. no. 125314
作者:  Wang H;  Wang H;  Yang;  Jiang DS
收藏  |  浏览/下载：121/5  |  提交时间：2010/04/28
GAN  ALLOYS  
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文  OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载：109/2  |  提交时间：2010/04/22
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文  OAI收割
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.)
收藏  |  浏览/下载：35/0  |  提交时间：2010/12/12
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111) 期刊论文  OAI收割
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038103
Wang H (Wang Hui); Liang H (Liang Hu); Wang Y (Wang Yong); Ng KW (Ng Kar-Wei); Deng DM (Deng Dong-Mei); Lau KM (Lau Kei-May)
收藏  |  浏览/下载：96/3  |  提交时间：2010/04/22
Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD 期刊论文  OAI收割
journal of the korean physical society, 2010, 卷号: 57, 期号: 1, 页码: 128-132
Sun YP (Sun Yuanping); Sun Y (Sun Yuanping); Cho YH (Cho Yong-Hoon); Wang H (Wang Hui); Wang LL (Wang Lili); Zhang SM (Zhang Shuming); Yang H (Yang Hui)
收藏  |  浏览/下载：513/2  |  提交时间：2010/08/17
Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文  OAI收割
acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG
收藏  |  浏览/下载：49/4  |  提交时间：2010/03/08