机构

• 半导体研究所 [40]

采集方式

• OAI收割 [40]

内容类型

• 期刊论文 [38]
• 会议论文 [2]

发表日期

• 2014 [1]
• 2013 [1]
• 2011 [3]
• 2010 [2]
• 2009 [5]
• 2008 [4]
• 更多

学科主题

• 半导体物理 [40]

筛选

浏览/检索结果: 共40条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Insight into the photoelectron angular dependent energy distribution of negative-electron-affinity InP photocathodes 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2014, 2014, 卷号: 104, 104, 期号: 2, 页码: 021120, 021120 作者:  Chen, ZH;  Jiang, XW;  Dong, S;  Li, JB;  Li, SS   |  收藏  |  浏览/下载：36/0  |  提交时间：2015/03/25 Electron energy and angle distribution of GaAs photocathodes 期刊论文  OAI收割 journal of applied physics, Journal of Applied Physics, 2013, 2013, 卷号: 114, 114, 期号: 3, 页码: 033523, 033523 作者:  Chen, Zhanghui;  Jiang, Xiangwei;  Li, Jingbo;  Li, Shushen;  Wang, Linwang   |  收藏  |  浏览/下载：19/0  |  提交时间：2014/05/08 Tuning Electron Spin States in Quantum Dots by Spin-Orbit Interactions 期刊论文  OAI收割 chinese physics letters, CHINESE PHYSICS LETTERS, 2011, 2011, 卷号: 28, 28, 期号: 6, 页码: article no.67303, Article no.67303 作者:  Liu Y;  Cheng F;  Liu, Y, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. yuliu@semi.ac.cn   |  收藏  |  浏览/下载：40/0  |  提交时间：2011/07/05 ARTIFICIAL ATOMS  RESONANCE  MEMORY  LAYERS  WELLS  GATE  Artificial Atoms  Resonance  Memory  Layers  Wells  Gate   Tuning of anisotropy in two-electron quantum dots by spin-orbit interactions 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 99, 99, 期号: 3, 页码: 32102, 32102 作者:  Liu Y;  Cheng F;  Li XJ;  Peeters FM;  Chang K   |  收藏  |  浏览/下载：19/0  |  提交时间：2012/01/06 ARTIFICIAL ATOMS  Artificial Atoms   The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文  OAI收割 physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 7, 页码: 1152-1155, 1152-1155 作者:  Liu CR;  Li JB;  Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn;  jbli@semi.ac.cn   |  收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05 First principle calculation  Indium nitride  Band gap  Defect  INITIO MOLECULAR-DYNAMICS  AUGMENTED-WAVE METHOD  INDIUM NITRIDE  GAP  PSEUDOPOTENTIALS  SEMICONDUCTORS  IMPURITIES  ABSORPTION  DEFECTS  ALLOYS  First Principle Calculation  Indium Nitride  Band Gap  Defect  Initio Molecular-dynamics  Augmented-wave Method  Indium Nitride  Gap  Pseudopotentials  Semiconductors  Impurities  Absorption  Defects  Alloys   Tuning of the two electron states in quantum rings through the spin-orbit interaction 期刊论文  OAI收割 physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 4, 页码: art. no. 045312, Art. No. 045312 作者:  Liu Y (Liu Y.);  Cheng F (Cheng F.);  Li XJ (Li X. J.);  Peeters FM (Peeters F. M.);  Chang K (Chang Kai)   |  收藏  |  浏览/下载：70/4  |  提交时间：2010/08/17 GATE CONTROL  Gate Control  Spintronics  Resonance  Energy  Layers  Dot  SPINTRONICS  RESONANCE  ENERGY  LAYERS  DOT   Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies 期刊论文  OAI收割 physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 12, 页码: art. no. 125412, Art. No. 125412 作者:  Zhang LX (Zhang Lixin);  Zhou XF (Zhou Xiang-Feng);  Wang HT (Wang Hui-Tian);  Xu JJ (Xu Jing-Jun);  Li JB (Li Jingbo)   |  收藏  |  浏览/下载：19/0  |  提交时间：2010/10/11 INITIO MOLECULAR-DYNAMICS  Initio Molecular-dynamics  Electron Gases  Heterostructures  Transition  ELECTRON GASES  HETEROSTRUCTURES  TRANSITION   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 12, 页码: art. no. 123705 Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB 收藏  |  浏览/下载：82/4  |  提交时间：2010/03/08 EMISSION  SPECTRA  LASERS  8-BAND   Possible origin of ferromagnetism in undoped anatase TiO2 期刊论文  OAI收割 physical review b, 2009, 卷号: 79, 期号: 9, 页码: art. no. 092411 作者:  Li JB 收藏  |  浏览/下载：71/34  |  提交时间：2010/03/08 ab initio calculations  ferromagnetic materials  magnetic moments  magnetic semiconductors  titanium compounds  vacancies (crystal)